Barrier Rectifier. MBRF30200CT-D-J Datasheet

MBRF30200CT-D-J Rectifier. Datasheet pdf. Equivalent

Part MBRF30200CT-D-J
Description 30A High Power Schottky Barrier Rectifier
Feature Chip Integration Technology Corporation MBRF30200CT-D-J 30A High Power Schottky Barrier Rectifier .
Manufacture CITC
Datasheet
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MBRF30200CT-D-J
Chip Integration Technology Corporation
MBRF30200CT-D-J
30A High Power Schottky Barrier Rectifier
Main Product Characteristics
IF(AV)
VRWM
TJ
2 X 15A
200V
175OC
Features
Low forward voltage drop.
Excellent high temperature stability.
Fast switching capability.
Suffix "G" indicates Halogen-free part.
Lead free in compliance with EU RoHS.
Mechanical data
Epoxy : UL94V-0 rated flame retardant.
Case : JEDEC ITO-220AB-J molded plastic body.
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026.
Polarity: As marked.
Weight : Approximated 1.95 gram.
Outline
ITO-220AB-J
0.410(10.41)
0.390(9.91)
0.646(16.40)
0.606(15.40)
PIN
1 23
0.132(3.45)
0.124(3.15)
DIA
0.1 36( 3.45)
0.120(3.05)
0.056(1.43)
0.043(1.10)
0.056(1.43)
0.043(1.10)
0.037(0.93)
0.026(0.67)
0.104(2.64)
0.096(2.44)
0.192(4.89)
0.177(4.49)
0.270(6.85)
0.254(6.45)
45.0°
0.113(2.88)
0.090(2.28)
0.531(13.50)
0.492(12.50)
0.114(2.90)
0.984(2.50)
0.025(0.63)
0.015(0.37)
Maximum ratings and electrical characteristics
Rating at 25OC ambient temperature unless otherwise specified.
Dimensions in inches and (millimeters)
Circuit Diagram
PIN 1
PIN 2
PIN 3
Parameter
Working peak reverse voltage
Forward rectified current (total device)
Forward surge current (per diode)
Peak repetitive reverse surge current
(per diode)
Typical Thermal resistance(per diode)
Storage temperature
Operating Junction temperature
Conditions
Symbol
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
VRWM
IO
IFSM
Pulse width 2us, 1000Hz, square wave
at TA 25oC,10 cycles
IRRM
Junction to case
Junction to Ambient
RθJC
RθJA
TSTG
TJ
MBRF30200CT-D-J
200
30
200
1
8
50
-55 ~ +175
-55 ~ +175
UNIT
V
A
A
A
OC/W
OC/W
OC
OC
Parameter
Forward voltage drop (per diode)
Reverse current (per diode)
Reverse Breakdown Voltage (per diode)
Conditions
IF =15A, TJ = 25OC
IF = 15A, TJ = 125OC
VR = 200V, TJ = 25OC
VR = 200V, TJ = 125OC
IR = 0.5mA, TJ = 25OC
Symbol MIN.
VF
IR
VBR
200
TYP.
MAX.
950
870
0.1
10
UNIT
mV
mA
V
Document ID : DS-21K168
Revised Date : 2019/03/12
1
Revision : C1



MBRF30200CT-D-J
Chip Integration Technology Corporation
MBRF30200CT-D-J
30A High Power Schottky Barrier Rectifier
Rating and characteristic curves
Document ID : DS-21K168
Revised Date : 2019/03/12
2
Revision : C1





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