BARRIER RECTIFIER. MBRF1060CT Datasheet

MBRF1060CT RECTIFIER. Datasheet pdf. Equivalent

Part MBRF1060CT
Description SCHOTTKY BARRIER RECTIFIER
Feature LITE-ON SEMICONDUCTOR SCHOTTKY BARRIER RECTIFIERS MBRF1060CT REVERSE VOLTAGE - 60 Volts FORWARD CUR.
Manufacture LITE-ON
Datasheet
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MBRF1060CT
LITE-ON
SEMICONDUCTOR
SCHOTTKY BARRIER RECTIFIERS
MBRF1060CT
REVERSE VOLTAGE - 60 Volts
FORWARD CURRENT - 10 Amperes
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification 94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
B
K
PIN
1 23
MECHANICAL DATA
Case : ITO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.06 ounces, 1.7 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
G
I
HH
PIN 1
PIN 3
ITO-220AB
M
J
N
L
PIN 2
ITO-220AB
DIM. MIN. MAX.
A
15.50 16.50
B
10.0 10.40
C
3.00 3.50
D
9.00 9.30
E
2.90 3.60
F
13.46 14.22
G
1.15 1.70
H
2.40 2.70
I
0.75 1.00
J
0.45 0.70
K
3.00 3.30
L
4.36 4.77
M
2.48 2.80
N
2.50 2.80
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25ambient temperature unless otherwise specified.
CHARACTERISTICS
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward RectifiedCurrent
at TC=120 C (See Fig.1)
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load
Peak Repetitive Reverse Current
tp=2us, square F=1KHz
@TJ=25 C
Voltage Rate of Change (Rated VR)
Maximum Forward
Voltage, (Note 1)
@IF=5A TJ =125 C
@IF=5A TJ =25 C
@IF=10A TJ =125 C
VRRM
VRMS
VDC
I(AV)
IFSM
IRRM
dv/dt
VF
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =25 C
@TJ =125 C
IR
Typical Junction Capacitance,
per element (Note 2)
CJ
Typical Thermal Resistance (Note 3)
R0JC
Operating Temperature Range
TJ
Storage Temperature Range
TSTG
Dielectric Strengh from terminals to case,
AC with t=1 minute, RH<30%
Vdis
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal Resistance Junction to Case.
MBRF1060CT
60
42
60
10
125
1
10000
0.65
0.80
0.90
0.02
15
220
4.0
-55 to +150
-55 to +175
2000
UNIT
V
V
V
A
A
A
V/us
V
mA
pF
C/W
C
C
V
REV. 5, Apr-2011, KTHC50



MBRF1060CT
RATING AND CHARACTERISTIC CURVES
MBRF1060CT
FIG.1 - FORWARD CURRENT DERATING CURVE
16
12
8
4
RESISTIVE OR INDUCTIVE LOAD
0
25
50
75
100
125
150
175
CASE TEMPERATURE , C
10000
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
1000
TJ = 125 C
100
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
150
125
100
75
50
25
8.3ms Single Half-Sine-Wave
0
1
2
5
10
20
50
100
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
10
10
1
TJ = 25 C
0
0
20
40
60
80
100 120
PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%)
1
TJ = 25 C
PULSE WIDTH 300us
2% Duty cycle
0.1
0.0
0.2
0.4
0.6
0.8
1.0
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
100
TJ = 25 C, f= 1MHz
10
0.1
1
4
10
100
REVERSE VOLTAGE , VOLTS





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