Schottky Barrier Rectifier
INCHANGE Semiconductor
MBRF1635
FEATURES
·High current capability
·Avalanche rated ·Low Pow...
Schottky Barrier Rectifier
INCHANGE Semiconductor
MBRF1635
FEATURES
·High current capability
·Avalanche rated ·Low Power Loss,high Efficiency ·High frequency operation ·High Surge Capability,High Current Capability ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·For use in low voltage,high frequency inverters,free wheeling
and polarity protection applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM VRWM
VR
IF(AV)
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
Average Rectified Forward Current Tc=125℃
35
24
V
35
16
A
IF(RSM)
Forward Current rms;Tc=125℃ (Square wave,20KHz)
32
A
Nonrepetitive Peak Surge Current
IFSM
8.3ms single half sine-wave superimposed 150
A
on rated load conditions
TJ
Junction Temperature
-55~150 ℃
Tstg
Storage Temperature Range
-55~175 ℃
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
Schottky Barrier Rectifier
INCHANGE Semiconductor
MBRF1635
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case
MAX 3.0
UNIT ℃/W
ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle≤1%)
SYMBOL VF IR
PARAMETER
CONDITIONS
Maximum Instantaneous Forward Voltage Maximum Instantaneous Reverse Current
IF= 16A ; Tc= 25℃ IF= 16A ; Tc=125℃ VR= 35V;Tc= 25℃
VR= 35V;Tc= 125℃
MAX
0.63 0.57 0.5
15
UNIT V mA
NOTICE： ISC reserves the rights to make changes of the conte...
