MBRF10100

Schottky Barrier Rectifier MBRF10100 FEATURES ·Low Forward Voltage ·High Operating Junction Temperature ·Extremely low reverse leakage ·Optimized VF vs. IR trade off for high efficiency ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High frequency switching ·High efficiency SMPS ·Automotive ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VRRM Peak Repetitive Reverse Voltage IF(AV) IFSM Average Rectified Forward Current (Rated VR) TC= 135℃ Non-repetitive Peak Surge Current (8.3ms single half-wave) TJ Junction Temperature Tstg Storage Temperature Range dv/dt Voltage Rate of Change (Rated VR) VALUE UNIT 100 V 10 A 150 A -65~175 ℃ -65~175 ℃ 10000 V/μs isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier MBRF10100 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 3.5 UNIT ℃/W ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300us,Duty Cycle≤2%) SYMBOL PARAMETER CONDITIONS MAX UNIT IF= 10A ; TC= 25℃ VF Maximum Instantaneous Forward Voltage IF= 10A ; TC= 125℃ IF= 20A ; TC= 25℃ IF= 20A ; TC= 125℃ IR Maximum Instantaneous Reverse Current VR=100V, TC= 25℃ VR=100V, TC= 100℃ 0.8 0.65 0.95 V 0.75 0.1 6 mA NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications...