Barrier Rectifier. MBR40100CT Datasheet

MBR40100CT Rectifier. Datasheet pdf. Equivalent

Part MBR40100CT
Description Dual Schottky Barrier Rectifier
Feature SEMICONDUCTOR TECHNICAL DATA MBR40100CT, MBRF40100CT, MBRB40100CT Dual Schottky Barrier Rectifiers.
Manufacture First Silicon
Datasheet
Download MBR40100CT Datasheet

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Recommendation Recommendation Datasheet MBR40100CT Datasheet





MBR40100CT
SEMICONDUCTOR
TECHNICAL DATA
MBR40100CT, MBRF40100CT, MBRB40100CT
Dual Schottky Barrier Rectifiers
Reverse Voltage 100 Volts Forward Current 40.0 Amperes
Features
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
Dual rectifier construction, positive center tap
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
Guardring for overvoltage protection
For use in low voltage, high frequency inverters, free wheeling,
and polarity protection applications
High temperature soldering guaranteed:
250°C/10 seconds, 0.25" (6.35mm) from case
Mechanical Data
Case: JEDEC TO-22B, TO-220F , TO-263 molded
plastic body
Terminals: Plated leads, solderable per MIL-STD-750,
Method 2026
Polarity: As marked
Mounting Position: Any
Mounting Torque: 10 in-lbs maximum
Weight: 0.08 ounce, 2.24 grams
TO-220
TO-220F
TO-263(D2PAK)
Mounting Pad Layout TO-263
Dimensions in inches and (millimeters)
2017. 03. 05
Revision No : 0
1/3



MBR40100CT
MBR40100CT, MBRF40100CT, MBRB40100CT
MAXIMUM RATINGS ( Ta=25 unless otherwise noted )
Symbol
Parameter
VRRM
Peak repetitive reverse voltage
VRWM
Working peak reverse voltage
VR
DC blocking voltage
VR(RMS)
RMS reverse voltage
IO
Average rectified output current
Non-Repetitive peak forward surge current
IFSM
8.3ms half sine wave
PD
Power dissipation
RΘJA
Thermal resistance from junction to ambient
Tj
Junction temperature
Tstg
Storage temperature
Value
100
70
40
280
2
50
125
-55~+150
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Reverse voltage
V(BR)
IR=1mA
100
Reverse current
IR
VR=100V
Forward voltage
VF1
VF2*
IF=20A
IF=40A
Typical total capacitance
Ctot
VR=4V,f=1MHz
300
*Pulse test
Max
0.1
0.95
1.1
Unit
V
V
A
A
W
/W
Unit
V
mA
V
V
pF
2017. 03. 05
Revision No : 0
2/3





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