MBRS2060CT

Schottky Barrier Rectifier INCHANGE Semiconductor MBRS2060CT FEATURES ·High current capability ·Avalanche rated ·Low Power Loss,high Efficiency ·High frequency operation ·High Surge Capability,High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For use in low voltage,high frequency inverters,free wheeling and polarity protection applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR IF(AV) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Tc=135℃ 60 42 V 60 20 A IF(RSM) Forward Current rms;Tc=135℃ (Square wave,20KHz) 20 A Nonrepetitive Peak Surge Current IFSM 8.3ms single half sine-wave superimposed 150 A on rated load conditions TJ Junction Temperature -65~150 ℃ Tstg Storage Temperature Range -65~175 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier INCHANGE Semiconductor MBRS2060CT THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.5 UNIT ℃/W ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle≤1%) SYMBOL VF IR PARAMETER CONDITIONS Maximum Instantaneous Forward Voltage Maximum Instantaneous Reverse Current IF= 10A ; Tc= 25℃ IF= 10A ; Tc=125℃ IF= 20A ; Tc= 25℃ IF= 20A ; Tc= 125℃ VR= 60V;Tc= 25℃ VR= 60V;Tc= 125℃ MAX 0.80 0.70 0.95 0.85 0.1 10 UNIT V mA NOTICE： I...