SBR1045CTL

Schottky Barrier Rectifier FEATURES ·Schottky Barrier Chip ·Guard Ring Die Construction for Transient Protection ·Low Power Loss/High Efficiency ·High Surge Capability ·High Current Capability ·Low Forward Voltage Drop ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-voltage,high frequency inverters,free wheeling and polarrity protection applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 45 V VR(RMS) RMS Reverse Voltag 31 V IF(AV) Average Rectified Forward Current (Rated VR) TC= 125℃ 10 A Non-repetitive Peak Surge Current IFSM (Surge applied at rated load conditions half- 90 A wave, single phase, 60Hz) TJ Junction Temperature -65~150 ℃ Tstg Storage Temperature Range -65~150 ℃ SBR1045CTL isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier SBR1045CTL THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 2.5 UNIT ℃/W ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle≤1%) SYMBOL PARAMETER CONDITIONS VF Maximum Instantaneous Forward Voltage IF= 5A ; TC= 25℃ IF= 5A ; TC= 85℃ IR Maximum Instantaneous Reverse Current VR=45V, TC= 25℃ VR=45V, TC= 125℃ MAX 0.55 0.53 0.5 100 UNIT V mA NOTICE： ISC reserves the rights to make changes of the content herein the datashe...