SBR30200CT

Schottky Barrier Rectifier INCHANGE Semiconductor SBR30200CT FEATURES ·With TO-220 packaging ·Metal silicon junction, majority carrier conduction ·Low power loss, high efficiency ·Guardring for overvoltage protection ·High surge current capability ·Low stored charge majority carrier conduction ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply ·Converters ·Free-Wheeling diodes ·Reverse battery protection ·Center tap configuration ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VRRM VRMS VR IF(AV) Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage Average Rectified Forward Current @Tc=120℃ VALUE UNI T 200 V 30 A Nonrepetitive Peak Surge Current IFSM (8.3ms single half sine-wave superimposed on 200 A rated load conditions) IFRM Peak Repetitive Reverse Surge Current 30 A TJ Junction Temperature -65~175 ℃ Tstg Storage Temperature Range -65~175 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier INCHANGE Semiconductor SBR30200CT THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 2.0 UNIT ℃/W ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle≤1%) SYMBOL VF IR PARAMETER CONDITIONS Maximum Instantaneous Forward Voltage Maximum Instantaneous Reverse Current IF= 15A ;Tc= 25℃ IF= 15A ;Tc= 125℃ VR= rated VRRM; Tc= 25℃ VR= rated VRRM; Tc= 125℃ MAX 0.98 0.88 0....