SDT30B100D1

Schottky Barrier Rectifier INCHANGE Semiconductor SDT30B100D1 FEATURES ·Low Forward Voltage ·High Operating Junction Temperature ·Extremely low reverse leakage ·Optimized VF vs. IR trade off for high efficiency ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High frequency switching ·High efficiency SMPS ·Automotive ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VR Peak Repetitive Reverse Voltage DC Blocking Voltage 100 V IF(AV) Average Rectified Forward Current (Rated VR) TC= 135℃ 30 A Non-repetitive Peak Surge Current IFSM (Surge applied at rated load conditions half- 130 A wave, single phase, 60Hz) TJ Junction Temperature -55~175 ℃ Tstg Storage Temperature Range -55~175 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier INCHANGE Semiconductor SDT30B100D1 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 2 UNIT ℃/W ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300us,Duty Cycle≤2%) SYMBOL PARAMETER CONDITIONS IF= 5A ; TC= 25℃ IF= 5A ; TC= 125℃ VF Maximum Instantaneous Forward Voltage IF= 10A ; TC= 25℃ IF= 10A ; TC= 125℃ IF= 30A ; TC= 25℃ IF= 30A ; TC= 125℃ IR Maximum Instantaneous Reverse Current Vr=100V;Tj=25℃ Vr=100V;Tj=125℃ MAX 0.54 0.46 0.61 0.57 0.85 0.79 0.12 20 UNIT V mA NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at an...