SRAF560

Schottky Barrier Rectifier INCHANGE Semiconductor SRAF560 FEATURES ·Plastic material used carriers Underwriter Laboratory ·Metal silicon junction, majority carrier conduction ·Low power loss,high efficiency ·Guard ring for overvoltage protection ·High surge capability,high current capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For use in low voltage,high frequency inverters ·Free wheeling and polarity protection applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 60 V IF(AV) Average Rectified Forward Current 5 A Nonrepetitive Peak Surge Current IFSM 8.3ms single half sine-wave superimposed 120 A on rated load conditions TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier INCHANGE Semiconductor SRAF560 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 5.0 UNIT ℃/W ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle≤1%) SYMBOL PARAMETER CONDITIONS VF Maximum Instantaneous Forward Voltage IF= 5A ; Tc= 25℃ VR= VRWM;Tc= 25℃ IR Maximum Instantaneous Reverse Current VR= VRWM;Tc= 125℃ MAX 0.7 0.5 10 UNIT V mA NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at...