SRF30100CT

Schottky Barrier Rectifier SRF30100CT FEATURES ·Schottky Barrier Chip ·Low Power Loss/High Efficiency ·High current capability ·low forward voltage drop ·High surge capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-voltage,high frequency inverters，free wheeling and polarrity protection applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Peak Repetitive Reverse Voltage 100 V IF(AV) Average Rectified Forward Current (Rated VR) TC= 95℃ 30 A Nonrepetitive Peak Surge Current IFSM (Surge applied at rated load conditions half- 300 A wave, single phase, 60Hz) IRRM Peak Repetitive Reverse Surge Current 0.5 A TJ Junction Temperature -65~150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier SRF30100CT THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 2.0 UNIT ℃/W ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle≤1%) SYMBOL PARAMETER CONDITIONS VF Maximum Instantaneous Forward Voltage IF=15A ; TC= 25℃ IR Maximum Instantaneous Reverse Current Rated DC Voltage, TC= 25℃ Rated DC Voltage, TC= 100℃ MAX 0.85 0.5 50 UNIT V mA NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a g...