ST30100

Schottky Barrier Rectifier INCHANGE Semiconductor ST30100 FEATURES ·Center tap configuration ·150℃ Operating Junction Temperature ·Guaranteed Reverse Avalanche ·Ultralow forward voltage drop ·High frequency operation ·Low Stored Charge Majority Carrier Conduction ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply ·Converters ·Free-Wheeling diodes ·Reverse battery protection ·Center tap configuration ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRMS VR Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage 100 V IF(AV) Average Rectified Forward Current (Rated VR) TC= 106℃ 30 A Nonrepetitive Peak Surge Current IFSM 8.3ms single half sine-wave superimposed 300 A on rated load conditions TC= 150℃ TJ Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier INCHANGE Semiconductor ST30100 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 2.0 UNIT ℃/W ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle≤1%) SYMBOL VF IR PARAMETER CONDITIONS Maximum Instantaneous Forward Voltage Maximum Instantaneous Reverse Current (Measured at 1MHz and Applied Reverse Voltage of 4.0V D.C) IF= 30A ; Tc= 25℃ IF= 30A ; Tc= 125℃ VR= rated VRRM; Tc= 25℃ VR= rated VRRM; Tc= 125℃ MAX 0.75 0.70 1 75 UNIT ...