STPS30L120CT

Schottky Barrier Rectifier INCHANGE Semiconductor STPS30L120CT FEATURES ·High junction temperature capability ·Low Power Loss,high Efficiency ·Low forward voltage drop current ·High Surge Capability,High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Be suited for high frequency switch mode power supplies. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 120 V IF(AV) Average Rectified Forward Current 30 A Nonrepetitive Peak Surge Current IFSM 8.3ms single half sine-wave superimposed 220 A on rated load conditions TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~175 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier INCHANGE Semiconductor STPS30L120CT THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case per diode total ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle≤1%) SYMBOL VF IR PARAMETER CONDITIONS Maximum Instantaneous Forward Voltage Maximum Instantaneous Reverse Current IF= 5A ; Tc= 25℃ IF= 5A ; Tc= 125℃ IF=1 5A ; Tc= 25℃ IF= 15A ; Tc= 125℃ IF= 30A ; Tc= 25℃ IF= 30A ; Tc= 125℃ VR= VRWM;Tc= 25℃ VR= VRWM;Tc= 125℃ MAX 1.3 0.7 MAX 0.675 0.57 0.88 0.71 1.08 0.84 0.2 35 UNIT ℃/W UNIT V mA NOTICE： ISC reserves the rights to make changes of the con...