STPS30150CFP

Schottky Barrier Rectifier INCHANGE Semiconductor STPS30150CFP FEATURES ·With TO-220F packaging ·High Junction Temperature Capability ·Low forward voltage, high current capability ·High current capability ·Low power loss, high efficiency ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply ·Free-Wheeling diodes ·Reverse battery protection ·Center tap configuration ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VRRM VRMS VR IF(AV) Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage Average Rectified Forward Current @Tc=110℃ VALUE UNI T 150 V 15 A IFSM RMS Forward Current 30 A Nonrepetitive Peak Surge Current IFSM (10ms single half sine-wave superimposed on 220 A rated load conditions) TJ Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~175 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier INCHANGE Semiconductor STPS30150CFP THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 4.0 UNIT ℃/W ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle≤1%) SYMBOL PARAMETER CONDITIONS IF= 15A ;Tc= 25℃ VF Maximum Instantaneous Forward Voltage IF= 15A ;Tc= 125℃ IF= 30A ;Tc= 25℃ IF= 30A ;Tc= 125℃ IR Maximum Instantaneous Reverse Current VR= rated VRRM; Tj= 25℃ VR= rated VRRM; Tj= 125℃ MAX 0.92 0.75 1.00 0.86 6.8 8.0 UNIT V μA mA NOTICE： ISC re...