TSSD10L45SW

Schottky Barrier Rectifier INCHANGE Semiconductor TSSD10L45SW FEATURES ·Low Forward Voltage ·High Frequency ·Extremely low reverse leakage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching mode power supplies ·Lighting application ·DC/DC Converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Peak Repetitive Reverse Voltage DC Blocking Voltage 45 V IF(AV) IFSM TJ Average Rectified Forward Current 10 A Non-repetitive Peak Surge Current (8.3ms single half sine-wave superimposed 120 A on rated load per diode) Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier INCHANGE Semiconductor TSSD10L45SW THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 19 UNIT ℃/W ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300us,Duty Cycle≤2%) SYMBOL PARAMETER CONDITIONS MAX UNIT VF Forward Voltage per diode IR Reverse Current per diode IF= 10A ; TJ= 25℃ IF= 10A ;TJ= 125℃ VR=45V; TJ= 25℃ VR=45V; V= 125℃ 0.55 V 0.5 50 µA 20 mA NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The produ...