DatasheetsPDF.com

TSSD10L100SW

Taiwan Semiconductor

Trench Schottky Rectifier

TSSD10L100SW - TSSD10L200SW Taiwan Semiconductor 10A, 100V - 200V Trench Schottky Rectifier FEATURES ● Patented Trench...


Taiwan Semiconductor

TSSD10L100SW

File Download Download TSSD10L100SW Datasheet


Description
TSSD10L100SW - TSSD10L200SW Taiwan Semiconductor 10A, 100V - 200V Trench Schottky Rectifier FEATURES ● Patented Trench Schottky technology ● Low power loss / high efficiency ● Ideal for automated placement ● Guard ring for over-voltage protection ● High forward surge capability ● Compliant to RoHS directive 2011/65/EU and In accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Switching mode power supply (SMPS) ● Adapters ● Lighting application ● On-board DC/DC converter KEY PARAMETERS PARAMETER VALUE UNIT IF(AV) VRRM IFSM TJ MAX Package 10 A 100 - 200 V 120 A 150 °C TO-252 (D-PAK) Configuration Single die MECHANICAL DATA ● Case: TO-252 (D-PAK) ● Molding compound meets UL 94V-0 flammability rating ● Packing code with suffix "G" means green compound (halogen-free) ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 1A whisker test ● Polarity: As marked ● Weight: 0.4 g (approximately) TO-252 (D-PAK) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER TSSD10L TSSD10L SYMBOL 100SW 150SW Marking code on the device 10L100SW 10L150SW Repetitive peak reverse voltage VRRM 100 150 Forward current IF(AV) 10 Surge peak forward current, 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 200 Critical rate of rise of off-state voltage dV/dt 10,000 Junction temperature TJ -55 to +150 Storage temperature TSTG -55 to +150 TSSD10L 200SW 10L200SW 200...




Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)