Schottky Barrier Rectifier
INCHANGE Semiconductor
TST20L60CW
FEATURES ·With TO-220 packaging ·High Junction Temperatur...
Schottky Barrier Rectifier
INCHANGE Semiconductor
TST20L60CW
FEATURES ·With TO-220 packaging ·High Junction Temperature Capability ·Low forward voltage drop ·High current capability ·Low power loss, high efficiency ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching power supply ·Free-Wheeling diodes ·Reverse battery protection ·Center tap configuration
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM VRWM
VR
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
60
V
IF(AV)
Average Rectified Forward Current
20
A
Nonrepetitive Peak Surge Current
IFSM
(8.3ms single half sine-wave superimposed 120
A
on rated load conditions)
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
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Schottky Barrier Rectifier
INCHANGE Semiconductor
TST20L60CW
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case
MAX 3.0
UNIT ℃/W
ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle≤1%)
SYMBOL
PARAMETER
CONDITIONS
IF= 10A ; Tc= 25℃
IF= 10A ; Tc= 125℃
VF
Maximum Instantaneous Forward Voltage
IF= 20A ; Tc= 25℃
IF= 20A ; Tc= 125℃
VR= VRWM;Tc= 25℃
IR
Maximum Instantaneous Reverse Current
VR= VRWM;Tc= 125℃
MAX
0.65 0.61 0.78 0.76 0.5
50
UNIT V mA
Notice: ISC reserves the rights to make changes of the content herein the datashe...