2N6343

2N6342-2N6349 High-reliability discrete products and engineering services since 1977 SILICON BIDIRECTIONAL THYRISTORS FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Symbol Value Unit Peak repetitive off-state voltage(1) (Gate open, TJ = -40 to 110°C, ½ sine wave 50 to 60Hz) 2N6342, 2N6346 2N6343, 2N6347 2N6344, 2N6348 2N6345, 2N6349 VDRM 200 400 Volts 600 800 RMS on-state current Full cycle sine wave 50 to 60Hz TC = 80°C TC = 90°C IT(RMS) 8 Amps 4 Peak non-repetitive surge current (One full cycle, 60Hz, TC = 80°C) Preceded and followed by rated current ITSM 100 Amps Circuit fusing (t = 8.3ms) I2t 40 A2s Peak gate power (TC = 80°C, pulse width = 2µs) PGM 20 Watts Average gate power (TC = 80°C, t = 8.3ms) PG(AV) 0.5 Watts Peak gate current IGM 2 Amps Peak gate voltage VGM 10 Volts Operating temperature range TJ -40 to 125 °C Storage temperature range Tstg -40 to 150 °C Note 1: VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. THERMAL CHARACTERISTICS Characteristic Thermal resistance, junction to case Symbol RӨJC Max Unit 2.2 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C and either polarity of MT2 to MT1...