SILICON BIDIRECTIONAL THYRISTORS
2N6342-2N6349
High-reliability discrete products and engineering services since 1977
SILICON BIDIRECTIONAL THYRISTORS
...
Description
2N6342-2N6349
High-reliability discrete products and engineering services since 1977
SILICON BIDIRECTIONAL THYRISTORS
FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive off-state voltage(1) (Gate open, TJ = -40 to 110°C, ½ sine wave 50 to 60Hz) 2N6342, 2N6346 2N6343, 2N6347 2N6344, 2N6348 2N6345, 2N6349
VDRM
200 400
Volts
600
800
RMS on-state current Full cycle sine wave 50 to 60Hz
TC = 80°C TC = 90°C
IT(RMS)
8
Amps
4
Peak non-repetitive surge current (One full cycle, 60Hz, TC = 80°C) Preceded and followed by rated current
ITSM
100
Amps
Circuit fusing (t = 8.3ms)
I2t
40
A2s
Peak gate power (TC = 80°C, pulse width = 2µs)
PGM
20
Watts
Average gate power (TC = 80°C, t = 8.3ms)
PG(AV)
0.5
Watts
Peak gate current
IGM
2
Amps
Peak gate voltage
VGM
10
Volts
Operating temperature range
TJ
-40 to 125
°C
Storage temperature range
Tstg
-40 to 150
°C
Note 1: VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS Characteristic
Thermal resistance, junction to case
Symbol RӨJC
Max
Unit
2.2
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C and either polarity of MT2 to MT1...
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