Thyristor
isc Thyristors
INCHANGE Semiconductor
2N6508
APPLICATIONS ·It is suitable to fit all modes of control found in applica...
Description
isc Thyristors
INCHANGE Semiconductor
2N6508
APPLICATIONS ·It is suitable to fit all modes of control found in applications
such as overvoltage crowbar protection,motor control circuits in power tools and kitchen aids,in-rush current limiting circuits, . capacitive discharge ignition, voltage regulation circuits etc. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM Repetitive peak off-state voltage
VRRM Repetitive peak reverse voltage IT(AV) Average on-stage current
IT(RMS) RMS on-state current ITSM Surge non-repetitive on-state current
PG(AV) Average gate power dissipation
Tj
Operating junction temperature
Tstg
Storage temperature
MIN
UNIT
600
V
600
V
16
A
25
A
250
A
0.5
W
-40~125 ℃
-40~150 ℃
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isc Thyristors
INCHANGE Semiconductor
2N6508
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
Tj=25℃
IRRM
Repetitive peak reverse current
VRM=VRRM,RGK= 220Ω,
Tj=125℃
Tj=25℃
IDRM
Repetitive peak off-state current VDM=VDRM, ,RGK= 220Ω
Tj=125℃
VTM On-state voltage
ITM= 50A
IGT
Gate-trigger current
VD = 12 V; RL=100Ω
VGT Gate-trigger voltage
VD = 12 V; RL=100Ω
Rth(j-c) Thermal resistance
Junction to case
MIN MAX UNIT
10 μA
2
mA
10 μA
2
mA
1.8
V
30 mA
1.5
V
1.5 ℃/W
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