2N6509

isc Thyristors INCHANGE Semiconductor 2N6509 APPLICATIONS ·It is suitable to fit all modes of control found in applications such as overvoltage crowbar protection,motor control circuits in power tools and kitchen aids,in-rush current limiting circuits, . capacitive discharge ignition, voltage regulation circuits etc. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(AV) Average on-stage current IT(RMS) RMS on-state current ITSM Surge non-repetitive on-state current PG(AV) Average gate power dissipation Tj Operating junction temperature Tstg Storage temperature MIN 800 800 16 25 250 0.5 -40~125 -40~150 UNIT V V A A A W ℃ ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VRM=VRRM,RGK= 220Ω, Tj=25℃ Tj=125℃ Tj=25℃ IDRM Repetitive peak off-state current VDM=VDRM, ,RGK= 220Ω Tj=125℃ VTM On-state voltage ITM= 50A IGT Gate-trigger current VD = 12 V; RL=100Ω VGT Gate-trigger voltage VD = 12 V; RL=100Ω Rth(j-c) Thermal resistance Junction to case MIN MAX UNIT 10 μA 2 mA 10 μA 2 mA 1.8 V 30 mA 1.5 V 1.5 ℃/W isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor 2N6509 Notice： ISC reserves the rights to make changes of the content herein the datasheet at any t...