Control SCR. 25TTS08 Datasheet

25TTS08 SCR. Datasheet pdf. Equivalent

Part 25TTS08
Description Phase Control SCR
Feature 25TTS... High Voltage Series Vishay High Power Products Phase Control SCR, 25 A 2 (A) TO-220AB 1 .
Manufacture Vishay
Datasheet
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25TTS08
25TTS... High Voltage Series
Vishay High Power Products
Phase Control SCR, 25 A
2
(A)
TO-220AB
1 (K) (G) 3
PRODUCT SUMMARY
VT at 16 A
ITSM
VRRM
< 1.25 V
300 A
800/1200 V
DESCRIPTION/FEATURES
The 25TTS... High Voltage Series of silicon controlled
rectifiers are specifically designed for medium power
switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
Typical applications are in input rectification (soft start) and
these products are designed to be used with Vishay HPP
input diodes, switches and output rectifiers which are
available in identical package outlines.
This product has been designed and qualified for industrial
level.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
SINGLE-PHASE BRIDGE
Capacitive input filter TA = 55 °C, TJ = 125 °C,
18
common heatsink of 1 °C/W
THREE-PHASE BRIDGE
22
UNITS
A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
IRMS
VRRM/VDRM
ITSM
VT
dV/dt
Sinusoidal waveform
16 A, TJ = 25 °C
dI/dt
TJ
VOLTAGE RATINGS
PART NUMBER
25TTS08
25TTS12
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
800
1200
VALUES
16
25
800/1200
300
1.25
500
150
- 40 to 125
VDRM, MAXIMUM PEAK
DIRECT VOLTAGE
V
800
1200
UNITS
A
V
A
V
V/µs
A/µs
°C
IRRM/IDRM
AT 125 °C
mA
10
Document Number: 93702
Revision: 19-Jun-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1



25TTS08
25TTS... High Voltage Series
Vishay High Power Products Phase Control SCR, 25 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
Maximum RMS on-state current
Maximum peak, one-cycle,
non-repetitive surge current
IT(AV)
IRMS
ITSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
Maximum on-state voltage drop
On-state slope resistance
Threshold voltage
Maximum reverse and direct leakage current
Holding current
Maximum latching current
Maximum rate of rise of off-state voltage
Maximum rate of rise of turned-on current
I2t
VTM
rt
VT(TO)
IRM/IDM
IH
IL
dV/dt
dI/dt
TEST CONDITIONS
TC = 93 °C, 180° conduction half sine wave
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
t = 0.1 to 10 ms, no voltage reapplied
16 A, TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VR = Rated VRRM/VDRM
Anode supply = 6 V, resistive load, initial IT = 1 A
Anode supply = 6 V, resistive load
VALUES
UNITS
TYP. MAX.
16
25
A
300
350
450
A2s
630
6300
A2s
1.25
V
12.0
mΩ
1.0
V
0.5
10
mA
-
100
200
500
V/µs
150
A/µs
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
SYMBOL
PGM
PG(AV)
+ IGM
- VGM
Maximum required DC gate current to trigger
IGT
Maximum required DC gate
voltage to trigger
VGT
Maximum DC gate voltage not to trigger
VGD
Maximum DC gate current not to trigger
IGD
TEST CONDITIONS
Anode supply = 6 V, resistive load, TJ = - 10 °C
Anode supply = 6 V, resistive load, TJ = 25 °C
Anode supply = 6 V, resistive load, TJ = 125 °C
Anode supply = 6 V, resistive load, TJ = - 10 °C
Anode supply = 6 V, resistive load, TJ = 25 °C
Anode supply = 6 V, resistive load, TJ = 125 °C
TJ = 125 °C, VDRM = Rated value
VALUES
8.0
2.0
1.5
10
60
45
20
2.5
2.0
1.0
0.25
2.0
UNITS
W
A
V
mA
V
mA
SWITCHING
PARAMETER
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
SYMBOL
tgt
trr
tq
TJ = 25 °C
TEST CONDITIONS
TJ = 125 °C
VALUES
0.9
4
110
UNITS
µs
www.vishay.com
2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93702
Revision: 19-Jun-08





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