BT151S-500R

isc Thyristors BT151S-500R APPLICATIONS Mesa glass passivation technology； Have high blocking voltage and high temperature stability cleaner； Electric tools such as motor speed controller； Solid state relay； Heating controller (temperature)； Other phase control circuit Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO L PARAMETER MIN VDRM Repetitive peak off-state voltage 500 VRRM Repetitive peak reverse voltage 500 IT(AV) On-state current Tc=80℃ 7.5 ITSM Surge non-repetitive on-state current TP=10ms 80 PG(AV) Average gate power 1 di/dt Repetitive rate of rise of on-state current after triggering Tj=125℃ 50 I2t I2t for fusing t = 10 ms 64 IGM Peak gate current tp=20us ,Tj=125℃ 4 Tj Operating Junction temperature -40 ~+125 Tstg Storage temperature -40 ~+150 UNIT V V A A W A/us A2S A ℃ ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT IRRM Repetitive peak reverse current IDRM VTM IGT VGT IH IL dv/dt Rth(j-c) Repetitive peak off-state current On-state voltage Gate-trigger current Gate-trigger voltage Holding current Latching current Critical rate of rise of off-state voltage Thermal resistance junction to mounting base VRRM=500V, Tj=125℃ VRRM=500V, Tj=25℃ VDRM=500V, Tj=125℃ VDRM=500V, Tj=25℃ ITM= 24A VD=12V; RL=100Ω VD=12V; RL=100Ω IT=0.5A IG=1.2IGT VD=2/3VDRM Tj=125℃ in free air 1 5 1 5 1.5 6 1.5 30 60 100 500...