BT258X-800R

DISCRETE SEMICONDUCTORS DATA SHEET BT258X series Thyristors logic level Product specification September 2018 WeEn Semiconductors Thyristors logic level Product specification BT258X series GENERAL DESCRIPTION Passivated, sensitive gate thyristors in a full pack, plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. QUICK REFERENCE DATA SYMBOL PARAMETER MAX. MAX. MAX. UNIT VDRM, VRRM IT(AV) IT(RMS) ITSM BT258X- 500R 600R 800R Repetitive peak off-state 500 600 800 V voltages Average on-state current 5 5 5 A RMS on-state current 8 8 8 A Non-repetitive peak on-state 75 75 75 A current PINNING - SOT186A PIN DESCRIPTION 1 cathode 2 anode 3 gate case isolated PIN CONFIGURATION mb 1 23 TO-220F (SOT186A) SYMBOL A K G sym037 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. VDRM, VRRM Repetitive peak off-state - voltages IT(AV) IT(RMS) ITSM I2t dIT/dt IGM VRGM PGM PG(AV) Tstg Tj Average on-state current half sine wave; Ths ≤ 90 ˚C - RMS on-state current all conduction angles - Non-repetitive peak on-state current half sine wave; Tj = 25 ˚C prior to surge t = 10 ms - t = 8.3 ms - I2t for fusing t = 10 ms - Repetitive rate of rise of ITM = 10 A; IG = 50 mA; - on-state curre...