BTW69-800RG

isc Thyristors INCHANGE Semiconductor BTW69-800RG DESCRIPTION ·With TO-3P packaging ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Battery charging system ·Uninterruptible power supply ·Variable speed motor drive ·Industrial welding systems ·By pass AC switch ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM VRRM IT(RSM) ITSM PG(AV) Repetitive peak off-state voltage Repetitive peak reverse voltage Average on-state current @Tc=102℃ Surge non-repetitive on-state current 50Hz 60Hz Average gate power dissipation ( over any 20 ms period ) @Tc=125℃ Tj Operating junction temperature Tstg Storage temperature MAX 800 800 50 580 610 1 -40~125 -40~150 UNIT V V A A W ℃ ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VR=VRRM Rated; Tj=25℃ IDRM Repetitive peak off-state current VD=VDRM Rated; Tj=125℃ VTM On-state voltage IGT Gate-trigger current VGT Gate-trigger voltage IT=100A;tP=380μs VD =12V;RL=33Ω VD =12V;RL=33Ω Rth (j-c) Junction to case For AC MIN MAX UNIT 10 μA 5 mA 1.9 V 80 mA 1.3 V 0.9 ℃/W isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor BTW69-800RG NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presen...