Thyristors
isc Thyristors
C106D
FEATURES ·Glassivated surface for reliability and uniformity ·Practical level triggering and hold...
Description
isc Thyristors
C106D
FEATURES ·Glassivated surface for reliability and uniformity ·Practical level triggering and holding characteristics ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation APPLICATIONS ·Designed for high volume consumer applications such as
temperature, light, and speed control; process and remote control, and warning systems where reliability of operation Is important.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM Repetitive peak off-state voltage
VRRM Repetitive peak reverse voltage
IT(AV) On-state current TA=30℃
IT(RMS) RMS on-state current
ITM Surge peak on-state current
PGM Peak gate power
PG(AV) Average gate power
Tj
Operating Junction temperature
Tstg Storage temperature
Rth(j-c) Thermal resistance, junction to case
Rth(j-a) Thermal resistance, junction to ambient
MIN
400 400 2.55
4 20 0.5 0.1 110 -40 ~+150 3 75
UNIT
V V A A A W W ℃ ℃ ℃/W ℃/W
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN
IRRM IDRM
Repetitive peak reverse current Repetitive peak off-state current
VRM=VRRM,
VRM=VRRM, Tj=110℃
VDM=VDRM,
VDM=VDRM, Tj=110℃
VTM On-state voltage
ITM= 4A
IGT
Gate-trigger current
VAK=6V; RL=100Ω
VGT Gate-trigger voltage
VAK=6V; RL=100Ω
IH
Holding current
VAA=12V; RGK=1kΩ
TYP. MAX UNIT
0.01 0.1
mA
0.01 0.1
mA
2.2 V
200 μA
0.8 V
3 mA
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