C106D

isc Thyristors C106D FEATURES ·Glassivated surface for reliability and uniformity ·Practical level triggering and holding characteristics ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation Is important. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(AV) On-state current TA=30℃ IT(RMS) RMS on-state current ITM Surge peak on-state current PGM Peak gate power PG(AV) Average gate power Tj Operating Junction temperature Tstg Storage temperature Rth(j-c) Thermal resistance, junction to case Rth(j-a) Thermal resistance, junction to ambient MIN 400 400 2.55 4 20 0.5 0.1 110 -40 ~+150 3 75 UNIT V V A A A W W ℃ ℃ ℃/W ℃/W ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN IRRM IDRM Repetitive peak reverse current Repetitive peak off-state current VRM=VRRM, VRM=VRRM, Tj=110℃ VDM=VDRM, VDM=VDRM, Tj=110℃ VTM On-state voltage ITM= 4A IGT Gate-trigger current VAK=6V; RL=100Ω VGT Gate-trigger voltage VAK=6V; RL=100Ω IH Holding current VAA=12V; RGK=1kΩ TYP. MAX UNIT 0.01 0.1 mA 0.01 0.1 mA 2.2 V 200 μA 0.8 V 3 mA isc website：www.iscsemi.cn 1 isc & iscsemi isregistered trademark NOTI...