CLA30E1200PB

isc Thyristors INCHANGE Semiconductor CLA30E1200PB DESCRIPTION ·With TO-220 packaging ·High heat dissipation and durability ·Thermowatt construction for low thermal ·Glass passivated junctions and center gate fire for greater parameter uniformity and stability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(AV) Average forward current IT(RMS) RMS on-state current ITSM Surge non-repetitive on-state current ( 1/2 cycle,sine wave;50HZ;Tc=125℃ ) PG(AV) Average gate power dissipation Tc=150℃ Tc=150℃ Tp=8.3ms;Tc=70℃ Tj Operating junction temperature Tstg Storage temperature MIN 1200 1200 30 47 UNIT V V A A 300 A 0.5 W -40~125 ℃ -40~150 ℃ isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor CLA30E1200PB ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VRM=VRRM IDRM Repetitive peak off-state current VDM=VDRM Tj=25℃ Tj=125℃ VTM On-state voltage ITM= 30A IGT Gate-trigger current VD = 6V VGT Gate-trigger voltage VD = 6V Rth(j-c) Thermal resistance Junction to case MIN MAX UNIT 0.01 2.0 mA 1.3 V 30 mA 1.3 V 0.5 ℃/W NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any tim...