Thyristors. MCR218-4 Datasheet

MCR218-4 Thyristors. Datasheet pdf. Equivalent

Part MCR218-4
Description Thyristors
Feature isc Thyristors INCHANGE Semiconductor MCR218-4 DESCRIPTION ·With TO-220 packaging ·High heat dissi.
Manufacture INCHANGE
Datasheet
Download MCR218-4 Datasheet

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MCR218-4
isc Thyristors
INCHANGE Semiconductor
MCR218-4
DESCRIPTION
·With TO-220 packaging
·High heat dissipation and durability
·Thermowatt construction for low thermal
·Glass passivated junctions and center gate fire for greater
parameter uniformity and stability
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·Switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VDRM Repetitive peak off-state voltage
VRRM Repetitive peak reverse voltage
IT(AV)
ITSM
PG(AV)
Average on-state current
Surge non-repetitive on-state current
( 1/2 cycle,sine wave;60HZ;Tc=125)
Average gate power dissipation
Tj
Operating junction temperature
Tstg Storage temperature
Tc=70
Tp=8.3ms;Tc=70
MIN
200
200
8
100
0.5
-40~125
-40~150
UNIT
V
V
A
A
W
ELECTRICAL CHARACTERISTICS (TC=25unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
IRRM
Repetitive peak reverse current VRM=VRRM
IDRM
Repetitive peak off-state current VDM=VDRM
Tj=25
Tj=125
VTM On-state voltage
ITM= 16A
IGT
Gate-trigger current
VD = 12 V; RL=100Ω
VGT Gate-trigger voltage
VD = 12 V; RL=100Ω
Rth(j-c) Thermal resistance
Junction to case
MIN MAX UNIT
10
2.0
mA
1.8 V
25 mA
1.5 V
2.0 /W
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MCR218-4
INCHANGE Semiconductor
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
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incidental damages.
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isc & iscsemi is registered trademark





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