MCR225-10FP

isc Thyristors INCHANGE Semiconductor MCR225-10FP DESCRIPTION ·With TO-220F packaging ·Long-term stability ·Thyristor for line frequency ·Planar passivated chip ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·AC power controller ·Motor control ·Power converter ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(AV) ITSM PG(AV) Average forward current Surge non-repetitive on-state current ( 1/2 cycle, 60HZ,sine wave;Tc=70℃ ) Average gate power dissipation Tj Operating junction temperature Tstg Storage temperature Tc=85℃ MIN 800 800 25 340 0.5 -40~125 -40~150 UNIT V V A A W ℃ ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VRM=VRRM IDRM Repetitive peak off-state current VDM=VDRM Tj=25℃ Tj=125℃ VTM On-state voltage ITM= 50A IGT Gate-trigger current VD = 12V,RL=100Ω VGT Gate-trigger voltage VD = 12V,RL=100Ω Rth(j-c) Thermal resistance Junction to case MIN MAX UNIT 0.01 2 mA 1.8 V 40 mA 1.5 V 1.5 ℃/W isc website：www.iscsemi.com isc & iscsemi is registered trademark INCHANGE Semiconductor NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC produ...