Thyristor
isc Thyristors
INCHANGE Semiconductor
MCR310-10G
DESCRIPTION ·With TO-220 packaging ·High heat dissipation and durabil...
Description
isc Thyristors
INCHANGE Semiconductor
MCR310-10G
DESCRIPTION ·With TO-220 packaging ·High heat dissipation and durability ·Thermowatt construction for low thermal ·Glass passivated junctions and center gate fire for greater
parameter uniformity and stability ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM Repetitive peak off-state voltage
VRRM Repetitive peak reverse voltage
IT(RMS) ITSM PG(AV)
RMS on-state current
Surge non-repetitive on-state current ( 1/2 cycle,sine wave;60HZ;Tc=125℃ )
Average gate power dissipation
Tj
Operating junction temperature
Tstg Storage temperature
Tc=70℃ Tp=8.3ms;Tc=70℃
MIN
800 800 10 100 0.75 -40~110 -40~150
UNIT
V V A A W ℃ ℃
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
IRRM
Repetitive peak reverse current VRM=VRRM
IDRM
Repetitive peak off-state current VDM=VDRM
Tj=25℃ Tj=125℃
VTM On-state voltage
ITM= 20A
IGT
Gate-trigger current
VD = 12 V; RL=100Ω
VGT Gate-trigger voltage
VD = 12 V; RL=100Ω
Rth(j-c) Thermal resistance
Junction to case
MIN MAX UNIT
0.01 5.0
mA
2.2 V
200 mA
1.5 V
2.2 ℃/W
isc website:www.iscsemi.com
isc & iscsemi is registered trademark
INCHANGE Semiconductor
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is pres...
Similar Datasheet