S2010L

isc Thyristors INCHANGE Semiconductor S2010L DESCRIPTION ·With TO-220 packaging ·High heat dissipation and durability ·Thermowatt construction for low thermal ·Glass passivated junctions and center gate fire for greater parameter uniformity and stability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(RMS) ITSM PG(AV) RMS on-state current Surge non-repetitive on-state current ( 1/2 cycle,sine wave;Tc=25℃ ) Average gate power dissipation Tj Operating junction temperature Tstg Storage temperature Tp=8.3ms 50HZ 60HZ MIN 200 200 10 83 100 0.5 -40~125 -40~150 UNIT V V A A W ℃ ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VRM=VRRM IDRM Repetitive peak off-state current VDM=VDRM Tj=25℃ Tj=100℃ Tj=125℃ VTM On-state voltage ITM= 10A IGT Gate-trigger current VD = 12 V; RL=60Ω VGT Gate-trigger voltage VD = 12 V; RL=60Ω Rth(j-c) Thermal resistance Junction to case MIN MAX UNIT 0.01 0.2 mA 0.5 1.6 V 15 mA 1.5 V 3.0 ℃/W isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor S2010L NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information containe...