S6015L

isc Thyristors INCHANGE Semiconductor S6015L DESCRIPTION ·With TO-220 packaging ·High heat dissipation and durability ·Thermowatt construction for low thermal ·Glass passivated junctions and center gate fire for greater parameter uniformity and stability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state voltage 600 V VRRM Repetitive peak reverse voltage 600 V IT(RMS) RMS on-state current ITSM Surge non-repetitive on-state current ( 1/2 cycle,sine wave;Tc=25℃ ) 50HZ 60HZ 15 A 188 225 A PG(AV) Average gate power dissipation Tp=8.3ms 0.6 W Tj Operating junction temperature -40~125 ℃ Tstg Storage temperature -40~150 ℃ isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor S6015L ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT IRRM Repetitive peak reverse current VRM=VRRM IDRM Repetitive peak off-state current VDM=VDRM Tj=25℃ Tj=100℃ Tj=125℃ 0.01 0.5 mA 1.0 VTM On-state voltage ITM= 15A 1.6 V IGT Gate-trigger current VD = 12 V; RL=60Ω 30 mA VGT Gate-trigger voltage VD = 12 V; RL=60Ω 1.5 V Rth(j-c) Thermal resistance Junction to case 2.5 ℃/W NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The i...