S6025L

isc Thyristors S6025L DESCRIPTION ·With TO-220 packaging ·Electrically-isolated package ·High surge capability ·Glass passivated junctions and center gate fire for greater parameter uniformity and stability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(RMS) ITSM PG(AV) RMS on-state current Surge non-repetitive on-state current ( 1/2 cycle,sine wave;Tc=25℃ ) Average gate power dissipation Tj Operating junction temperature Tstg Storage temperature Tp=8.3ms 50HZ 60HZ MIN 600 600 25 300 350 0.5 -40~125 -40~150 UNIT V V A A W ℃ ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VRM=VRRM IDRM Repetitive peak off-state current VDM=VDRM Tj=25℃ Tj=100℃ Tj=125℃ VTM On-state voltage ITM= 25A IGT Gate-trigger current VD = 12 V; RL=60Ω VGT Gate-trigger voltage VD = 12 V; RL=60Ω Rth(j-c) Thermal resistance Junction to case MIN MAX UNIT 0.01 1.0 mA 2.0 1.6 V 35 mA 1.5 V 2.5 ℃/W isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors S6025L NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our produc...