TIC106N

® Jinglin Qidong Jilai Electronics Co., Ltd. SEMICONDUCTOR TECHNICAL DATA TIC106 Series(5A SCRS) TIC106 series 5A Continuous On-State Current 400V to 800V Off-State Voltage Max IGT of 200 A TO-220 PACKAGE ABSOLUTE RATING Symbol Parameter VDRM Repetitive peak off-state voltage TIC106D TIC106M TIC106S TIC106N VRRM Repetitive peak raverse voltage TIC106D TIC106M TIC106S TIC106N Continuous on-state current at(or below) 80 IT(RMS) case temperature Average on-state current(180 conduction IT(AV) angle) at (or below) 80 case temperature ITM IGM PGM PG(AV) TC Tstg Surge on-state current Peak positive gate current(pulse width 300 s) Peak gate power dissipation(pulse width 300 s) Average gate power dissipation Operating case temperature range Storage temperature Value 400 600 700 800 400 600 700 800 5 3.2 30 0.2 1.3 0.3 -40 110 -40 125 Units V V A A A A W W ® Jinglin Qidong Jilai Electronics Co., Ltd. SEMICONDUCTOR TECHNICAL DATA TIC106 series THERMAL RESISTANCE Symbol Parameter Rth(j-c) Junction to case thermal resistance Rtj(j-a) Junction to free air thermal resistance Value 3.5 62.5 Unit /W /W ELECTRICAL CHARACTERISTICS at 25 case temperature Symbol Testing conditions Min. Typ. Max. Unit IGT VGT IH VTM IDRM IRRM dv/dt VAA=6V, RL=100 , tp(g) 20 s VAA=6V, RL=100 , TC=-40 tp(g) 20 s RGK=1K VAA=6V, RL=100 , tp(g) 20 s RGK=1K VAA=6V, RL=100 , TC=110 tp(g) 20 s RGK=1K VAA=6V, RGK=1K , TC=-40 Initiating IT=10mA VAA=6V, RGK=1K , Initiating IT=10mA ITM=5A VD=r...