TIC116N

isc Thyristors TIC116N APPLICATIONS ·5A contimunous on-state current ·Glass passivated ·Max IGT of 20uA ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state voltage 800 V VRRM Repetitive peak reverse voltage 800 V IT(AV) On-state current Tc=80℃ 5 A ITSM Surge non-repetitive on-state current TP=10ms 80 A PGM Peak gate power PW≤300μs 5 W PG(AV) Average gate power 1 W Tj Operating Junction temperature -40 ~+125 ℃ Tstg Storage temperature -40 ~+150 ℃ Rth(j-c) Thermal resistance, junction to case 1.5 ℃/W Rth(j-a) Thermal resistance, junction to ambient 60 ℃/W ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT IRRM Repetitive peak reverse current VRM=VRRM, Tj=110℃ 10 uA IDRM Repetitive peak off-state current VRM=VRRM, Tj=110℃ 10 uA VTM On-state voltage ITM= 8A 1.5 V IGT Gate-trigger current VD=6V; RL=100Ω 20 uA VGT Gate-trigger voltage VD=12V; RL=100Ω 0.8 V IH Holding current IT=100mA Gate Open 20 mA NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have ap...