TIC116S

isc Thyristors INCHANGE Semiconductor TIC116series DESCRIPTION ·8A contimunous on-state current ·80A surge-current ·Glass passivated Wafer ·400V to 800V off-state Voltage ·Max IGT of 20mA ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT TIC116D 400 VDRM Repetitive voltage peakoff-state TIC116M TIC116S 600 700 V TIC116N 800 TIC116D 400 VRRM Repetitive voltage peakreverse TIC116M TIC116S 600 700 V TIC116N 800 IT(AV) IT(RMS) ITM PGM PG(AV) Tj Tstg On-state current Tc=70℃ RMS on-state current Tc=70℃ Surge peak on-state current Peak gate power PW≤300μs Average gate power Operating Junction temperature Storage temperature 5 A 8 A 80 A 5 W 1 W 110 ℃ -40 ~+125 ℃ isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Thyristors THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient INCHANGE Semiconductor TIC116series MIN TYP MAX UNIT 3 ℃/W 62.5 ℃/W ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IRRM IDRM Repetitive peak reverse current Repetitive peak off-state current VRM=VRRM, VRM=VRRM, Tj=110℃ VDM=VDRM, VDM=VDRM, Tj=110℃ VTM On-state voltage ITM= 8A IGT Gate-trigger current VAA=12V; RL=100Ω VGT Gate-trigger voltage VAA=12V; RL=100Ω IH Holding current VAA=12V;IT= 100m...