Document
® Jinglin
Qidong Jilai Electronics Co., Ltd.
SEMICONDUCTOR TECHNICAL DATA
TIC126 Series(12A SCRS)
TIC126 series
12A Continuous On-State Current 400V to 800V Off-State Voltage Max IGT of 20mA
TO-220 PACKAGE
ABSOLUTE RATING
Symbol
Parameter
VDRM Repetitive peak off-state voltage
TIC126D TIC126M TIC126S TIC126N
VRRM Repetitive peak raverse voltage
TIC126D TIC126M TIC126S TIC126N
Continuous on-state current at(or below) 80 IT(RMS) case temperature
Average on-state current(180 conduction IT(AV) angle) at (or below) 80 case temperature
ITM IGM PGM PG(AV) TC Tstg
Surge on-state current Peak positive gate current(pulse width 300 s) Peak gate power dissipation(pulse width 300 s) Average gate power dissipation Operating case temperature range Storage temperature
Value
400 600 700 800 400 600 700 800
12
7.5
100 3 5 1
-40 110 -40 125
Units
V
V
A A A A W W
® Jinglin
Qidong Jilai Electronics Co., Ltd.
SEMICONDUCTOR TECHNICAL DATA
TIC126 series
THERMAL RESISTANCE
Symbol
Parameter
Rth(j-c)
Junction to case thermal resistance
Rtj(j-a)
Junction to free air thermal resistance
Value 2.4 62.5
Unit /W /W
ELECTRICAL CHARACTERISTICS at 25 case temperature
Symbol
Testing conditions
Min. Typ. Max. Unit
IGT
VGT
IH VTM IDRM IRRM dv/dt
VAA=6V, RL=100 , tp(g) 20 s
VAA=6V, RL=100 , TC=-40
tp(g) 20 s RGK=1K
VAA=6V, RL=100 ,
tp(g) 20 s RGK=1K
VAA=6V, RL=100 , TC=110
tp(g) 20 s RGK=1K VAA=6V, RGK=1K , TC=-40
Initiating IT=100mA
VAA=6V, RGK=1K ,
Initiating IT=100mA
ITM=12A
VD=ratedVDRM, RGK=1K , TC=110
VR=ratedVRRM, IG=0, TC=110
VD=rated VD, RGK=1K , TC=110
-
5
20 mA
-
-
2.5
-
0.8 1.5
V
0.2
-
-
-
-
70
mA
-
-
40
-
-
1.4
V
-
-
2
mA
-
-
2
mA
-
100
- V/ s
.