12A SCR. TIC126N Datasheet

TIC126N SCR. Datasheet pdf. Equivalent

Part TIC126N
Description 12A SCR
Feature ® Jinglin Qidong Jilai Electronics Co., Ltd. SEMICONDUCTOR TECHNICAL DATA TIC126 Series(12A SCRS) T.
Manufacture Qidong Jilai
Datasheet
Download TIC126N Datasheet

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TIC126N
® Jinglin
Qidong Jilai Electronics Co., Ltd.
SEMICONDUCTOR TECHNICAL DATA
TIC126 Series(12A SCRS)
TIC126 series
12A Continuous On-State Current
400V to 800V Off-State Voltage
Max IGT of 20mA
TO-220 PACKAGE
ABSOLUTE RATING
Symbol
Parameter
VDRM Repetitive peak off-state voltage
TIC126D
TIC126M
TIC126S
TIC126N
VRRM Repetitive peak raverse voltage
TIC126D
TIC126M
TIC126S
TIC126N
Continuous on-state current at(or below) 80
IT(RMS) case temperature
Average on-state current(180 conduction
IT(AV) angle) at (or below) 80 case temperature
ITM
IGM
PGM
PG(AV)
TC
Tstg
Surge on-state current
Peak positive gate current(pulse width 300 s)
Peak gate power dissipation(pulse width 300 s)
Average gate power dissipation
Operating case temperature range
Storage temperature
Value
400
600
700
800
400
600
700
800
12
7.5
100
3
5
1
-40 110
-40 125
Units
V
V
A
A
A
A
W
W



TIC126N
® Jinglin
Qidong Jilai Electronics Co., Ltd.
SEMICONDUCTOR TECHNICAL DATA
TIC126 series
THERMAL RESISTANCE
Symbol
Parameter
Rth(j-c)
Junction to case thermal resistance
Rtj(j-a)
Junction to free air thermal resistance
Value
2.4
62.5
Unit
/W
/W
ELECTRICAL CHARACTERISTICS at 25 case temperature
Symbol
Testing conditions
Min. Typ. Max. Unit
IGT
VGT
IH
VTM
IDRM
IRRM
dv/dt
VAA=6V, RL=100 , tp(g) 20 s
VAA=6V, RL=100 , TC=-40
tp(g) 20 s RGK=1K
VAA=6V, RL=100 ,
tp(g) 20 s RGK=1K
VAA=6V, RL=100 , TC=110
tp(g) 20 s RGK=1K
VAA=6V, RGK=1K , TC=-40
Initiating IT=100mA
VAA=6V, RGK=1K ,
Initiating IT=100mA
ITM=12A
VD=ratedVDRM, RGK=1K , TC=110
VR=ratedVRRM, IG=0, TC=110
VD=rated VD, RGK=1K , TC=110
-
5
20 mA
-
-
2.5
-
0.8 1.5
V
0.2
-
-
-
-
70
mA
-
-
40
-
-
1.4
V
-
-
2
mA
-
-
2
mA
-
100
- V/ s





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