TIC126N

® Jinglin Qidong Jilai Electronics Co., Ltd. SEMICONDUCTOR TECHNICAL DATA TIC126 Series(12A SCRS) TIC126 series 12A Continuous On-State Current 400V to 800V Off-State Voltage Max IGT of 20mA TO-220 PACKAGE ABSOLUTE RATING Symbol Parameter VDRM Repetitive peak off-state voltage TIC126D TIC126M TIC126S TIC126N VRRM Repetitive peak raverse voltage TIC126D TIC126M TIC126S TIC126N Continuous on-state current at(or below) 80 IT(RMS) case temperature Average on-state current(180 conduction IT(AV) angle) at (or below) 80 case temperature ITM IGM PGM PG(AV) TC Tstg Surge on-state current Peak positive gate current(pulse width 300 s) Peak gate power dissipation(pulse width 300 s) Average gate power dissipation Operating case temperature range Storage temperature Value 400 600 700 800 400 600 700 800 12 7.5 100 3 5 1 -40 110 -40 125 Units V V A A A A W W ® Jinglin Qidong Jilai Electronics Co., Ltd. SEMICONDUCTOR TECHNICAL DATA TIC126 series THERMAL RESISTANCE Symbol Parameter Rth(j-c) Junction to case thermal resistance Rtj(j-a) Junction to free air thermal resistance Value 2.4 62.5 Unit /W /W ELECTRICAL CHARACTERISTICS at 25 case temperature Symbol Testing conditions Min. Typ. Max. Unit IGT VGT IH VTM IDRM IRRM dv/dt VAA=6V, RL=100 , tp(g) 20 s VAA=6V, RL=100 , TC=-40 tp(g) 20 s RGK=1K VAA=6V, RL=100 , tp(g) 20 s RGK=1K VAA=6V, RL=100 , TC=110 tp(g) 20 s RGK=1K VAA=6V, RGK=1K , TC=-40 Initiating IT=100mA VAA=6V, RGK=1K , Initiating IT=100mA ITM=12A VD=r...