TYN610

SEMICONDUCTOR TECHNICAL DATA Silicon Planar PNPN Thyristor (10A SCR) MAIN FEATURES Symbol IT(RMS) VDRM/VRRM ITSM value 10 600 100 unit A V A GENERAL DESCRIPTION .Glass passivated triacs in a plastic envelope , intended for use in applications requiring high bidirectional transient andblocking voltage capability and high thermal cycling performance. .Typical applications include motor control, industrial and domestic lighting , heating and static switching. TYN610 TO-220 1. KATHODE 2. ANODE 3. GATE 123 ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) symbol parameter value unit IT(RMS) RMS on-state current (full sine wave) D2 PAK/TO-220 TC=107℃ 10 A ITSM Non repetitive surge peak on-state current (full sine wave, Tj =25℃) t=10ms 100 t=8.3ms 110 A IGM PG(AV) Tstg Tj Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range 4 A Tj=125℃ 0.5 W -40 to +150 -40 to +125 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Rated repetitive peak off-state/reverse voltage VDRM,VRRM ID=10μA 600 V Rated repetitive peak off-state current IDRM, IRRM VD=620V 10 μA On-state voltage VTM IT=23A 1.4 1.75 V Gate trigger current VD=12V IGT I T =0.1A RL=100Ω 15 mA Gate trigger voltage Holding current VD=12V VGT I T =0.1A RL=100Ω IH IT =100mA IG=20mA 1.45 V 20 mA 2016. 02. 06 Revision No : 0 1/2 TYN610...