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TN1625-1000G Dataheets PDF



Part Number TN1625-1000G
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description 16A standard SCR
Datasheet TN1625-1000G DatasheetTN1625-1000G Datasheet (PDF)

Features ■ IT(RMS) =16 A ■ VDRM/VRRM = 600 to 1000 V ■ IGT = 25 mA Description The standard TN16 / TYNx16 16 A SCRs series is suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capabilities. TN1625 TYN616, TYN816 16 A standard SCRs A G K A A KA G D2PAK (TN1625-x00G) K A G TO-220AB (TYNx16RG) Table 1. Device summary Parameter TN1625-600G TN1625-1000G Unit TYN616RG TYN816RG VDRM/VRRM Sensitivity 600 800 10.

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Features ■ IT(RMS) =16 A ■ VDRM/VRRM = 600 to 1000 V ■ IGT = 25 mA Description The standard TN16 / TYNx16 16 A SCRs series is suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capabilities. TN1625 TYN616, TYN816 16 A standard SCRs A G K A A KA G D2PAK (TN1625-x00G) K A G TO-220AB (TYNx16RG) Table 1. Device summary Parameter TN1625-600G TN1625-1000G Unit TYN616RG TYN816RG VDRM/VRRM Sensitivity 600 800 1000 V 25 25 25 mA November 2007 Rev 6 1/9 www.st.com 9 Characteristics 1 Characteristics TN1625, TYN616, TYN816 Table 2. Absolute ratings (limiting values) Symbol Parameter IT(RMS) IT(AV) ITSM I2t dI/dt IGM PG(AV) Tstg Tj VRGM RMS on-state current (180 °Conduction angle) Average on-state current (180 °Conduction angle) Non repetitive surge peak on-state current I2t Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns Peak gate current Average gate power dissipation tp = 8.3 ms tp = 10 ms tp = 10 ms F = 60 Hz tp = 20 µs Storage junction temperature range Operating junction temperature range Maximum peak reverse gate voltage Tc = 110 °C Tc = 110 °C Tj = 25 °C Tj = 25 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C Value 16 10 200 190 180 50 4 1 - 40 to + 150 - 40 to + 125 5 Unit A A A A2S A/µs A W °C V Table 3. Symbol Electrical characteristics (Tj = 25 °C, unless otherwise specified) Test Conditions Value IGT VGT VGD IH IL dV/dt VTM Vt0 Rd IDRM IRRM VD = 12 V RL = 33 Ω VD = VDRM RL = 3.3 kΩ IT = 500 mA Gate open IG = 1.2 x IGT VD = 67 % VDRM Gate open ITM = 32 A tp = 380 µs Threshold voltage Dynamic resistance VDRM = VRRM MIN. 2 MAX. 25 MAX. 1.3 Tj = 125 °C MIN. 0.2 MAX. 40 MAX. 60 Tj = 125 °C MIN. 500 Tj = 25 °C MAX. 1.6 Tj = 125 °C MAX. 0.77 Tj = 125 °C MAX. 23 Tj = 25 °C MAX. 5 Tj = 125 °C 2 Unit mA V V mA mA V/µs V V mΩ µA mA Table 4. Thermal resistance Symbol Rth(j-c) Junction to case (DC) Rth(j-a) Junction to ambient (DC) Parameter S = 01 cm2 D2PAK TO-220AB Value 1.1 45 60 Unit °C/W °C/W S = copper surface under tab 2/9 TN1625, TYN616, TYN816 Characteristics Figure 1. Maximum average power Figure 2. dissipation versus average on-state current Average and D.C. on-state current versus case temperature P(W) 16 α = 180° 14 12 10 8 6 4 2 0 0 2 IT(AV)(A) 4 6 8 360° α 10 IT(AV)(A) 18 16 14 12 10 8 6 4 2 0 12 0 25 D.C. α = 180° Tcase(°C) 50 75 100 125 Figure 3. Average and D.C. on-state current Figure 4. versus ambient temperature (copper surface under tab: S=1cm2) (D2PAK) Relative variation of thermal impedance versus pulse duration IT(AV)(A) 4.0 3.5 3.0 D.C. 2.5 K=[Zth/Rth] 1.00 Zth(j-c) 2.0 α = 180° 1.5 0.10 Zth(j-a) 1.0 0.5 Tamb(°C) 0.0 tp(s) 0.01 0 25 50 75 100 125 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Figure 5. Relative variation of gate trigger current, holding current and latching current versus junction temperature Figure 6. Surge peak on-state current versus number of cycles IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C] 2.5 2.0 1.5 IGT 1.0 IH & IL 0.5 Tj(°C) 0.0 -40 -20 0 20 40 60 ITSM(A) 200 180 160 140 120 100 80 60 Repetitive TC=110°C Non repetitive Tj initial=25°C 40 80 100 120 140 20 0 1 Number of cycles 10 100 tp=10ms One cycle 1000 3/9 Characteristics TN1625, TYN616, TYN816 Figure 7. Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding values of I2t Figure 8. On-state characteristics (maximum values) ITSM(A), I2t (A2s) 2000 1000 Tj initial = 25°C ITSM ITM(A) 200 100 Tj max.: Vt0=0.77V Rd=23mΩ 100 dI/dt limitation I2t Tj=max 10 Tj=25°C 10 0.01 tp(ms) 0.10 1.00 10.00 VTM(V) 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Figure 9. Thermal resistance junction to ambient versus copper surface under tab (epoxy printed circuit board FR4, copper thickness: 35 µm) (D2PAK) Rth(j-a)(°C/W) 80 70 60 50 40 30 20 10 S(cm²) 0 0 4 8 12 16 20 24 28 32 36 40 4/9 TN1625, TYN616, TYN816 2 Ordering information scheme Ordering information scheme Figure 10. TN1625 Standard SCR series Current 16 = 16 A Sensitivity 25 = 25 mA Voltage 600 = 600 V 1000 = 1000 V Package G = D2PAK Packing mode Blank = Tube -TR = Tape and reel TN 16 25 - 600 G (-TR) Figure 11. TYNx16 Standard SCR series Voltage 6 = 600 V 8 = 800 V Current 16 = 16 A Packing mode RG = Tube TYN 6 16 RG 5/9 Package information 3 Package information TN1625, TYN616, TYN816 ● Epoxy meets UL94,V0 ● Cooling method: C ● Recommended torque value: 0.4 - 0.6 N·m In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard J.


TYN816RG TN1625-1000G TYN616F


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