TYN616F

isc Thyristors INCHANGE Semiconductor TYN616F APPLICATIONS ·It is suitable to fit all modes of control found in applications such as over voltage crowbar protection,motor control circuits in power tools and kitchen aids,in-rush current limiting circuits, Capacitive discharge ignition, voltage regulation circuits etc. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(AV) Average on-stage current IT(RMS) RMS on-state current PG(AV) Average gate power dissipation Tj Operating junction temperature Tstg Storage temperature TC=110℃ TC=110℃ Tj=125℃ MIN 600 600 10 16 1 -40~125 -40~150 UNIT V V A A W ℃ ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VRM=VRRM,RGK= 220Ω, Tj=25℃ Tj=125℃ Tj=25℃ IDRM Repetitive peak off-state current VDM=VDRM, ,RGK= 220Ω Tj=25℃ VTM On-state voltage ITM= 32A IGT Gate-trigger current VD= 12V; RL=33Ω VGT Gate-trigger voltage VD= 12V; RL=33Ω IH Holding current IT= 0.5A; Gate Open Rth(j-c) Thermal resistance（DC） Junction to case MIN MAX UNIT 5 μA 2 mA 5 μA 2 mA 1.6 V 2 25 mA 1.3 V 40 mA 1.1 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor TYN616F NOTICE： ISC reserves the rights to make changes of the content herein...