Document
TN2540, TXN625, TYN625, TYN825, TYN1225
Standard 25 A SCRs
A
G K
A
A
G
A K
G
K AG
D²PAK
TO-220AB
K AG
TO-220AB Insulated
Datasheet - production data
Features
• On-state rms current, IT(RMS) 25 A • Repetitive peak off-state voltage, VDRM/VRRM
600 to 1200 V • Triggering gate current, IGT 40 mA • Insulated package TO-220AB ins
– Insulating voltage 2500 V rms – UL1557 certified (file ref. E81734)
Description
These standard 25 A SCRs are suitable for general purpose applications.
Using clip assembly technology, they provide a superior performance in surge current capabilities.
TXN625RG is packaged in TO-220AB ins.
Order code
TN2540-600G-TR TN2540-800G-TR
TXN625RG TYN625RG TYN825RG TYN1225RG
Table 1. Device summary
Voltage VDRM/VRRM
600 V
800 V
1200 V
Y Y
Y Y
Y Y
Sensitivity IGT
40 mA 40 mA 40 mA 40 mA 40 mA 40 mA
Package
D2PAK D2PAK TO-220AB ins TO-220AB TO-220AB TO-220AB
August 2014
This is information on a product in full production.
DocID7478 Rev 9
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Characteristics
1
Characteristics
TN2540, TXN625, TYN625, TYN825, TYN1225
Symbol
Table 2. Absolute ratings (limiting values) Parameter
IT(RMS)
IT(AV)
ITSM I2t
dI/dt
IGM PG(AV)
Tstg Tj VRGM
TO-220AB, On-state rms current (180 °Conduction angle) D2PAK
Tc = 100 °C
TO-220AB ins Tc = 83 °C
Average on-state current (180 °Conduction angle)
Tc = 100 °C
Non repetitive surge peak on-state current I2t Value for fusing
tp = 8.3 ms tp = 10 ms tp = 10 ms
Tj = 25 °C Tj = 25 °C
Critical rate of rise of on-state current IG = 2 x IGT, tr ≤ 100 ns
F = 60 Hz
Tj = 125 °C
Peak gate current
tp = 20 µs
Tj = 125 °C
Average gate power dissipation
Tj = 125 °C
Storage junction temperature range Operating junction temperature range
Maximum peak reverse gate voltage
Value
25
16 314 300 450 50
4 1 - 40 to + 150 - 40 to + 125 5
Unit
A
A A A2S A/µs A W °C V
Symbol
Table 3. Electrical Characteristics (Tj = 25 °C, unless otherwise specified)
Test conditions
Value
IGT
VGT VGD
IH IL dV/dt VTM Vt0 Rd IDRM IRRM
VD = 12 V RL = 33 Ω
VD = VDRM RL = 3.3 kΩ IT = 500 mA Gate open IG = 1.2 x IGT VD = 67% VDRM Gate open ITM = 50 A tp = 380 µs Threshold voltage Dynamic resistance
VDRM = VRRM
Tj = 125 °C
Tj = 125 °C Tj = 25 °C Tj = 125 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C
MIN. MAX. MAX. MIN. MAX. MAX. MIN. MAX. MAX. MAX.
MAX.
4 40 1.3 0.2 50 90 1500 1.6 0.77 14 5 4
Unit
mA
V V mA mA V/µs V V mΩ µA mA
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DocID7478 Rev 9
TN2540, TXN625, TYN625, TYN825, TYN1225
Characteristics
Table 4. Thermal resistances
Symbol
Parameter
Rth(j-c) Junction to case (DC) Rth(j-a) Junction to ambient (DC)
S(1) = 1 cm2
D2PAK, TO-220AB TO-220AB ins D2PAK TO-220AB, TO-220AB ins
1. S = Copper surface under tab.
Value 1.0 2.0 45 60
Unit °C/W °C/W
Figure 1. Maximum average power dissipation versus average on-state current
P(W)
22
20
18
16
14
12
10
8
6 360°
4
2
IT(AV)(A)
α
0
0
2
4
6
8
10
12
14
Figure 2. Average and DC on-state current versus case temperature
IT(AV)(A)
28
26
24
DC
22
20
18
16
14
α = 180°
12
10
8
6
4
2
0
16
0
25
TO-220ABins
Tcase(°C)
50
75
D2PAK TO-220AB
100
125
Figure 3. Average and DC on-state current versus ambient temperature
Figure 4. Relative variation of thermal impedance versus pulse duration (D2PAK, and
TO-220AB)
IT(AV)(A)
3,5 DC
3,0
2,5
α = 180°
K=[Zth/Rth]
1.00
Zth(j-c)
2,0 1,5 1,0 0,5 0,0
0
D2PAK TO-220AB
0.10
Zth(j-a)
TO-220ABins
Tamb(°C)
tp(s)
0.01
25
50
75
100
125
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
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Characteristics
TN2540, TXN625, TYN625, TYN825, TYN1225
Figure 5. Relative variation of thermal impedance versus pulse duration (TO-220AB
ins)
K=[Zth/Rth]
1,0E+00
Figure 6. Relative variation of gate trigger, holding, and latching currents versus junction
temperature
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]
2.5
1,0E-01
Zth(j-c) Zth(j-a)
1,0E-02 1,0E-03
1,0E-02
1,0E-01
tp(s)
1,0E+00 1,0E+01 1,0E+02 1,0E+03
2.0
1.5
IGT
1.0
IH & IL
0.5
Tj(°C)
0.0
-40 -20
0
20
40
60
80 100 120 140
Figure 7. Surge peak on-state current versus number of cycles
ITSM(A)
350
300
250
200
150
100 50
Repetitive TC=83°C
0 1
Non repetitive Tj initial=25 °C
tp=10ms One cycle
Number of cycles
10
100
1000
Figure 8. Non-repetitive surge peak on-state current, and corresponding values of I2t
ITSM(A), I2t (A2s)
2000
Tj initial = 25°C
1000
ITSM
I2t dI/dt limitation
100 0.01
Sinusoidal pulse width tp(ms)
0.10
1.00
10.00
Figure 9. On-state characteristics (maximum values)
ITM(A)
1000
100
10
Tj max :
Vto = 0.77V
VTM(V)
Rd = 14m˜
1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Figure 10. Thermal resistance junction to
ambient versus copper surface under tab (D2PAK)
Rth(j-a)(°C/W)
80
70
60
50
40
30
20
10
0
0
4
8
12
Epoxy printed circuit board FR4, copper thickness = 35 µm
S(cm²)
16 20 24 28 32 36 40
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DocID7478 Rev 9
TN2540, TXN625, TYN625, TYN.