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TN2540-600G-TR Dataheets PDF



Part Number TN2540-600G-TR
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description Standard 25A SCR
Datasheet TN2540-600G-TR DatasheetTN2540-600G-TR Datasheet (PDF)

TN2540, TXN625, TYN625, TYN825, TYN1225 Standard 25 A SCRs A G K A A G A K G K AG D²PAK TO-220AB K AG TO-220AB Insulated Datasheet - production data Features • On-state rms current, IT(RMS) 25 A • Repetitive peak off-state voltage, VDRM/VRRM 600 to 1200 V • Triggering gate current, IGT 40 mA • Insulated package TO-220AB ins – Insulating voltage 2500 V rms – UL1557 certified (file ref. E81734) Description These standard 25 A SCRs are suitable for general purpose applications. Using clip.

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TN2540, TXN625, TYN625, TYN825, TYN1225 Standard 25 A SCRs A G K A A G A K G K AG D²PAK TO-220AB K AG TO-220AB Insulated Datasheet - production data Features • On-state rms current, IT(RMS) 25 A • Repetitive peak off-state voltage, VDRM/VRRM 600 to 1200 V • Triggering gate current, IGT 40 mA • Insulated package TO-220AB ins – Insulating voltage 2500 V rms – UL1557 certified (file ref. E81734) Description These standard 25 A SCRs are suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capabilities. TXN625RG is packaged in TO-220AB ins. Order code TN2540-600G-TR TN2540-800G-TR TXN625RG TYN625RG TYN825RG TYN1225RG Table 1. Device summary Voltage VDRM/VRRM 600 V 800 V 1200 V Y Y Y Y Y Y Sensitivity IGT 40 mA 40 mA 40 mA 40 mA 40 mA 40 mA Package D2PAK D2PAK TO-220AB ins TO-220AB TO-220AB TO-220AB August 2014 This is information on a product in full production. DocID7478 Rev 9 1/11 www.st.com Characteristics 1 Characteristics TN2540, TXN625, TYN625, TYN825, TYN1225 Symbol Table 2. Absolute ratings (limiting values) Parameter IT(RMS) IT(AV) ITSM I2t dI/dt IGM PG(AV) Tstg Tj VRGM TO-220AB, On-state rms current (180 °Conduction angle) D2PAK Tc = 100 °C TO-220AB ins Tc = 83 °C Average on-state current (180 °Conduction angle) Tc = 100 °C Non repetitive surge peak on-state current I2t Value for fusing tp = 8.3 ms tp = 10 ms tp = 10 ms Tj = 25 °C Tj = 25 °C Critical rate of rise of on-state current IG = 2 x IGT, tr ≤ 100 ns F = 60 Hz Tj = 125 °C Peak gate current tp = 20 µs Tj = 125 °C Average gate power dissipation Tj = 125 °C Storage junction temperature range Operating junction temperature range Maximum peak reverse gate voltage Value 25 16 314 300 450 50 4 1 - 40 to + 150 - 40 to + 125 5 Unit A A A A2S A/µs A W °C V Symbol Table 3. Electrical Characteristics (Tj = 25 °C, unless otherwise specified) Test conditions Value IGT VGT VGD IH IL dV/dt VTM Vt0 Rd IDRM IRRM VD = 12 V RL = 33 Ω VD = VDRM RL = 3.3 kΩ IT = 500 mA Gate open IG = 1.2 x IGT VD = 67% VDRM Gate open ITM = 50 A tp = 380 µs Threshold voltage Dynamic resistance VDRM = VRRM Tj = 125 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C MIN. MAX. MAX. MIN. MAX. MAX. MIN. MAX. MAX. MAX. MAX. 4 40 1.3 0.2 50 90 1500 1.6 0.77 14 5 4 Unit mA V V mA mA V/µs V V mΩ µA mA 2/11 DocID7478 Rev 9 TN2540, TXN625, TYN625, TYN825, TYN1225 Characteristics Table 4. Thermal resistances Symbol Parameter Rth(j-c) Junction to case (DC) Rth(j-a) Junction to ambient (DC) S(1) = 1 cm2 D2PAK, TO-220AB TO-220AB ins D2PAK TO-220AB, TO-220AB ins 1. S = Copper surface under tab. Value 1.0 2.0 45 60 Unit °C/W °C/W Figure 1. Maximum average power dissipation versus average on-state current P(W) 22 20 18 16 14 12 10 8 6 360° 4 2 IT(AV)(A) α 0 0 2 4 6 8 10 12 14 Figure 2. Average and DC on-state current versus case temperature IT(AV)(A) 28 26 24 DC 22 20 18 16 14 α = 180° 12 10 8 6 4 2 0 16 0 25 TO-220ABins Tcase(°C) 50 75 D2PAK TO-220AB 100 125 Figure 3. Average and DC on-state current versus ambient temperature Figure 4. Relative variation of thermal impedance versus pulse duration (D2PAK, and TO-220AB) IT(AV)(A) 3,5 DC 3,0 2,5 α = 180° K=[Zth/Rth] 1.00 Zth(j-c) 2,0 1,5 1,0 0,5 0,0 0 D2PAK TO-220AB 0.10 Zth(j-a) TO-220ABins Tamb(°C) tp(s) 0.01 25 50 75 100 125 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 DocID7478 Rev 9 3/11 11 Characteristics TN2540, TXN625, TYN625, TYN825, TYN1225 Figure 5. Relative variation of thermal impedance versus pulse duration (TO-220AB ins) K=[Zth/Rth] 1,0E+00 Figure 6. Relative variation of gate trigger, holding, and latching currents versus junction temperature IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C] 2.5 1,0E-01 Zth(j-c) Zth(j-a) 1,0E-02 1,0E-03 1,0E-02 1,0E-01 tp(s) 1,0E+00 1,0E+01 1,0E+02 1,0E+03 2.0 1.5 IGT 1.0 IH & IL 0.5 Tj(°C) 0.0 -40 -20 0 20 40 60 80 100 120 140 Figure 7. Surge peak on-state current versus number of cycles ITSM(A) 350 300 250 200 150 100 50 Repetitive TC=83°C 0 1 Non repetitive Tj initial=25 °C tp=10ms One cycle Number of cycles 10 100 1000 Figure 8. Non-repetitive surge peak on-state current, and corresponding values of I2t ITSM(A), I2t (A2s) 2000 Tj initial = 25°C 1000 ITSM I2t dI/dt limitation 100 0.01 Sinusoidal pulse width tp(ms) 0.10 1.00 10.00 Figure 9. On-state characteristics (maximum values) ITM(A) 1000 100 10 Tj max : Vto = 0.77V VTM(V) Rd = 14m˜ 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Figure 10. Thermal resistance junction to ambient versus copper surface under tab (D2PAK) Rth(j-a)(°C/W) 80 70 60 50 40 30 20 10 0 0 4 8 12 Epoxy printed circuit board FR4, copper thickness = 35 µm S(cm²) 16 20 24 28 32 36 40 4/11 DocID7478 Rev 9 TN2540, TXN625, TYN625, TYN.


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