ACTT12X-800CTN

isc Thyristors INCHANGE Semiconductor ACTT12X-800CTN DESCRIPTION ·With TO-220F packaging ·Operating in 3 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Solid state relays;heating and cooking appliances ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VDRM Repetitive peak off-state voltage 800 V VRRM Repetitive peak reverse voltage 800 V IT(RSM) Average on-state current ITSM Surge non-repetitive on-state current 50HZ 60HZ 12 A 120 132 A PG(AV) Average gate power dissipation ( over any 20 ms period ) 0.5 W Tj Operating junction temperature Tstg Storage temperature -40~150 ℃ -40~150 ℃ isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor ACTT12X-800CTN ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VR=VRRM Rated; IDRM Repetitive peak off-state current VD=VDRM Rated; Tj=25℃; Tj=150℃ VTM On-state voltage IGT Gate-trigger current VGT Rth (j-c) Gate-trigger voltage Junction to case IT=17A Ⅰ VD =12V;IT=100mA Ⅱ Ⅲ VD =12V;IT=100mA Half cycle MIN MAX UNIT 0.01 2 mA 1.5 V 35 35 mA 35 1.0 V 4.5 ℃/W NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for th...