Thyristor
isc Thyristors
INCHANGE Semiconductor
ACTT16-800CTN
DESCRIPTION ·With TO-220 packaging ·High operating junction temper...
Description
isc Thyristors
INCHANGE Semiconductor
ACTT16-800CTN
DESCRIPTION ·With TO-220 packaging ·High operating junction temperature ·Very high commutation performancemaximized at each
gate sensitivity ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·High temperature, high power motor control ·Solid state relays;heating and cooking appliances ·Switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM Repetitive peak off-state voltage
VRRM Repetitive peak reverse voltage
IT(RMS) RMS on-state current
@Tc=126℃
ITSM Surge non-repetitive on-state current
50HZ 60HZ
PG(AV) Average gate power dissipation ( over any 20 ms period )
MIN
UNIT
800
V
800
V
16
A
140 150
A
0.5
W
Tj
Operating junction temperature
Tstg Storage temperature
-40~150 ℃ -40~150 ℃
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isc Thyristors
INCHANGE Semiconductor
ACTT16-800CTN
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN MAX UNIT
IRRM Repetitive peak reverse current IDRM Repetitive peak off-state current
VR=VRRM Rated; VD=VDRM Rated;
Tj=125℃
0.01 2
mA
VTM On-state voltage
IGT
Gate-trigger current
VGT Gate-trigger voltage
IT=20A
Ⅰ
VD =12V;IT=0.1A;
Ⅱ
Ⅲ
VD =12V;IT=0.1A;
1.5 V
35 35 mA 35
1.0
V
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