Triac. BCR3PM-12LB Datasheet

BCR3PM-12LB Triac. Datasheet pdf. Equivalent

Part BCR3PM-12LB
Description Triac
Feature Preliminary Datasheet BCR3PM-12LB Triac R07DS0098EJ0300 Low Power Use (Previous: REJ03G0459-020.
Manufacture Renesas
Datasheet
Download BCR3PM-12LB Datasheet

Preliminary Datasheet BCR3PM-12LB Triac R07DS0098EJ0300 BCR3PM-12LB Datasheet
Recommendation Recommendation Datasheet BCR3PM-12LB Datasheet





BCR3PM-12LB
Preliminary Datasheet
BCR3PM-12LB
Triac
R07DS0098EJ0300
Low Power Use
(Previous: REJ03G0459-0200)
Rev.3.00
(The product guaranteed maximum junction temperature of 150C)
Sep 13, 2010
Features
IT (RMS) : 3 A
VDRM : 600 V
IFGTI, IRGTI, IRGT III : 20 mA (10 mA)Note5
Viso : 2000 V
Outline
Insulated Type
Planar Passivation Type
UL Recognized : Yellow Card No. E223904
RENESAS Package code: PRSS0003AA-A
(Package name: TO-220F)
12 3
2
3
1
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
Applications
Contactless AC switch, light dimmer, electric blanket, control of household equipment such as electric fan, solenoid
driver, small motor control, and other general purpose control applications
Warning
1. Refer to the recommended circuit values around the triac before using.
2. Be sure to exchange the specification before using. Otherwise, general triacs with the maximum
junction temperature of 125°C will be supplied.
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Symbol
VDRM
VDSM
Voltage class
12
600
720
Unit
V
V
R07DS0098EJ0300 Rev.3.00
Sep 13, 2010
Page 1 of 7



BCR3PM-12LB
BCR3PM-12LB
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Isolation voltage
Notes: 1. Gate open.
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
Viso
Ratings
3.0
30
3.7
3
0.3
6
0.5
– 40 to +150
– 40 to +150
2.0
2000
Preliminary
Unit
Conditions
A
Commercial frequency, sine full wave
360° conduction, Tc = 132C
A
60Hz sinewave 1 full cycle, peak value,
non-repetitive
A2s
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
W
W
V
A
C
C
g
Typical value
V
Ta = 25C, AC 1 minute,
T1·T2·G terminal to case
Electrical Characteristics
Parameter
Symbol Min. Typ. Max. Unit
Test conditions
Repetitive peak off-state current
IDRM
On-state voltage
VTM
Gate trigger voltageNote2
VFGT

VRGT

VRGT
Gate trigger currentNote2
IFGT

IRGT

IRGT
2.0
mA Tj = 150C, VDRM applied
1.5
V Tc = 25C, ITM = 4.5 A,
Instantaneous measurement
1.5
V Tj = 25C, VD = 6 V, RL = 6 ,
1.5
V
RG = 330
1.5
V
20Note5 mA Tj = 25C, VD = 6 V, RL = 6 ,
20Note5
mA
RG = 330
20Note5
mA
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltageNote4
VGD
0.2/0.1
Rth (j-c)
(dv/dt)c 5/1
V
Tj = 125C/150C, VD = 1/2 VDRM
4.5
C/W Junction to caseNote3
V/s Tj = 125C/150C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
5. High sensitivity (IGT 10 mA) is also available. (IGT item: 1)
Test conditions
1. Junction temperature
Tj = 125C/150C
2. Rate of decay of on-state commutating current
(di/dt)c = –1.5 A/ms
3. Peak off-state voltage
VD = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
VD
R07DS0098EJ0300 Rev.3.00
Sep 13, 2010
Page 2 of 7





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