BCR5LM-12RB

isc Thyristors INCHANGE Semiconductor BCR5LM-12RB DESCRIPTION ·With TO-220F packaging ·Operating in 3 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Solid state relays;heating and cooking appliances ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(AV) Average on-state current 600 V 600 V 5 A ITSM Surge non-repetitive on-state current 60HZ 50 A PG(AV) Average gate power dissipation ( over any 20 ms period ) Tj Operating junction temperature Tstg Storage temperature 0.3 W -40~150 ℃ -40~150 ℃ isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor BCR5LM-12RB ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VR=VRRM Rated; VD=VDRM Rated; IDRM Repetitive peak off-state current Tj=150℃ MIN MAX UNIT 2.0 mA VTM On-state voltage IGT Gate-trigger current VGT Gate-trigger voltage Rth (j-c) Junction to case IT=7A Ⅰ VD =6V;RL=6Ω;RG=330Ω Ⅱ Ⅲ VD =6V;RL=6Ω;RG=330Ω Half cycle 1.5 V 15 15 mA 15 1.5 V 4.9 ℃/W NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our prod...