Triac. BCR8FM-14LB Datasheet

BCR8FM-14LB Triac. Datasheet pdf. Equivalent

Part BCR8FM-14LB
Description Triac
Feature BCR8FM-14LB 700V - 8A - Triac Medium Power Use Features • IT (RMS) : 8 A • VDRM : 800 V (Tj=125C) •.
Manufacture Renesas
Datasheet
Download BCR8FM-14LB Datasheet

isc Thyristors BCR8FM-14LB DESCRIPTION ·With TO-220F packa BCR8FM-14LB Datasheet
BCR8FM-14LB 700V - 8A - Triac Medium Power Use Features • IT BCR8FM-14LB Datasheet
Recommendation Recommendation Datasheet BCR8FM-14LB Datasheet





BCR8FM-14LB
BCR8FM-14LB
700V - 8A - Triac
Medium Power Use
Features
IT (RMS) : 8 A
VDRM : 800 V (Tj=125C)
Tj: 150 °C
IFGTI, IRGTI, IRGT III:30 mA(20mA) Note6
Data Sheet
R07DS1187EJ0400
Rev.4.00
Jan. 15, 2019
Insulated Type
Planar Passivation Type
Viso: 2000V
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
Ordering code
#BB0
#FA0
RENESAS Package code: PRSS0003AP-A
(Package name: TO-220FPA)
Ordering code
#BH0
#BG0
#FG0
12 3
123
2
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
3
1
Application
Washing machine, Power supply, Solid state relay, and other general purpose AC control applications.
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Symbol
VDRM
VDSM
Voltage class
14
800
700
840
Unit
V
V
V
Conditions
Tj=125C
Tj=150C
Parameter
RMS on-state current
Symbol
IT (RMS)
Ratings
8
Surge on-state current
ITSM
80
I2t for fusion
I2t
26
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Isolation voltage Note7
PGM
PG (AV)
VGM
IGM
Tj
Tstg
Viso
5
0.5
10
2
40 to +150
40 to +150
2000
Notes: 1. Gate open.
2. Please refer to the Ordering Information.
R07DS1187EJ0400 Rev.4.00
Jan. 15, 2019
Unit
Conditions
A
Commercial frequency, sine full wave
360conduction,
Tc = 114C (#BH0, #BB0)Note2
Tc = 107C (#BG0, #FG0, #FA0)Note2
A
60 Hz sinewave 1 full cycle, peak value,
non-repetitive
A2s Value corresponding to 1 cycle of half wave
60 Hz, surge on-state current
W
W
V
A
C
C
V
Ta=25C, AC 1 minute,
T1 T2 G terminal to case
Page 1 of 8



BCR8FM-14LB
BCR8FM-14LB
Data Sheet
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Symbol
IDRM
VTM
Min.
Gate trigger voltageNote3
Gate trigger curentNote3
VFGT
 VRGT
 VRGT
IFGT

IRGT
 IRGT
Typ.
Max.
2.0
1.6
1.5
1.5
1.5
30 Note6
30 Note6
30 Note6
Unit
mA
V
V
V
V
mA
mA
mA
Test conditions
Tj = 150C, VDRM applied
Tc = 25C, ITM = 12A,
instantaneous measurement
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
Gate non-trigger voltage
VGD
0.2
V
Tj = 125C, VD = 1/2 VDRM
0.1
Tj = 150C, VD = 1/2 VDRM
Thermal resistance
Rth (j-c)
3.6
C/W Junction to caseNote4
(#BH0, #BB0)Note2
4.3
C/W Junction to caseNote4
(#BG0, #FG0, #FA0)Note2
Critical-rate of rise of off-state (dv/dt)c 10
V/s Tj = 125C
commutation voltageNote5
1
Tj = 150C
Notes: 3. Measurement using the gate trigger characteristics measurement circuit.
4. The contact thermal resistance Rth(c-f) in case of greasing is 0.5C /W.
5. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
6. High sensitivity (IGT20mA) is also available. (IGT item:1)
7. Make sure that your finished product containing this device meets your safe isolation requirements.
For safety, it's advisable that heatsink is electrically floating.
Test conditions
1. Junction temperature
Tj = 125°C/150°C
2. Rate of decay of on-state commutating current
(di/dt)c = 4.0 A/ms
3. Peak off-state voltage
VD = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Main Current
Main Voltage
(dv/dt)c
Time
(di/dt)c
Time
Time
VD
R07DS1187EJ0400 Rev.4.00
Jan. 15, 2019
Page 2 of 8





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)