Triac. BCR8FM-16LB Datasheet

BCR8FM-16LB Triac. Datasheet pdf. Equivalent

Part BCR8FM-16LB
Description Triac
Feature BCR8FM-16LB 800V - 8A - Triac Medium Power Use Features • IT (RMS) : 8 A • VDRM : 800 V • Tj: 150 °C.
Manufacture Renesas
Datasheet
Download BCR8FM-16LB Datasheet

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BCR8FM-16LB 800V - 8A - Triac Medium Power Use Features • IT BCR8FM-16LB Datasheet
Recommendation Recommendation Datasheet BCR8FM-16LB Datasheet





BCR8FM-16LB
BCR8FM-16LB
800V - 8A - Triac
Medium Power Use
Features
IT (RMS) : 8 A
VDRM : 800 V
Tj: 150 °C
IFGTI, IRGTI, IRGT III: 30 mA
Outline
Data Sheet
R07DS1325EJ0300
Rev.3.00
Sept. 10, 2019
Insulated Type
Planar Passivation Type
Viso: 2000V
RENESAS Package code: PRSS0003AP-A
(Package name: TO-220FPA)
Ordering code
#BG0
#BH0
123
2
1. T1 Terminal
2. T2 Terminal
3 3. Gate Terminal
1
Application
Motor control, Heater control, Power supply, Solid state relay, and other general purpose AC control applications.
Maximum Ratings
Parameter
Repetitive peak off-state voltage Note1
Non-repetitive peak off-state voltage Note1
Symbol
VDRM
VDSM
Voltage class
16
800
960
Unit
V
V
Parameter
RMS on-state current
Symbol
IT (RMS)
Ratings
8
Surge on-state current
ITSM
80
I2t for fusion
I2t
26
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Isolation voltage Note6
PGM
PG (AV)
VGM
IGM
Tj
Tstg
Viso
5
0.5
10
2
40 to +150
40 to +150
2000
Notes: 1. Gate open.
2. Please refer to the Ordering Information.
Unit
Conditions
A
Commercial frequency, sine full wave
360conduction,
Tc = 107C (#BG0) Note2
Tc = 114C (#BH0) Note2
A
60 Hz sinewave 1 full cycle, peak value,
non-repetitive
A2s Value corresponding to 1 cycle of half wave
60 Hz, surge on-state current
W
W
V
A
C
C
V
Ta=25C, AC 1 minute,
T1 T2 G terminal to case
R07DS1325EJ0300 Rev.3.00
Sept. 10, 2019
Page 1 of 7



BCR8FM-16LB
BCR8FM-16LB
Data Sheet
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Symbol
IDRM
VTM
Min.
Gate trigger voltage Note3
Gate trigger current Note3
VFGT
 VRGT
 VRGT
IFGT

IRGT
 IRGT
Typ.
Max.
2.0
1.6
1.5
1.5
1.5
30
30
30
Unit
mA
V
V
V
V
mA
mA
mA
Test conditions
Tj = 150C, VDRM applied
Tc = 25C, ITM = 12 A,
instantaneous measurement
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
Gate non-trigger voltage
VGD
0.2
V
Tj = 125C, VD = 1/2 VDRM
0.1
Tj = 150C, VD = 1/2 VDRM
Thermal resistance
Rth (j-c)
4.3
C/W Junction to case Note4
(#BG0) Note2
3.7
C/W Junction to case Note4
(#BH0) Note2
Critical-rate of rise of off-state (dv/dt)c 10
V/s Tj = 125C
commutation voltage Note5
1
Tj = 150C
Notes: 3. Measurement using the gate trigger characteristics measurement circuit.
4. The contact thermal resistance Rth(c-f) in case of greasing is 0.5C/W.
5. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
6. Make sure that your finished product containing this device meets your safe isolation requirements.
For safety, it's advisable that heatsink is electrically floating.
Test conditions
1. Junction temperature
Tj = 125°C/150°C
2. Rate of decay of on-state commutating current
(di/dt)c = 4 A/ms
3. Peak off-state voltage
VD = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Main Current
Main Voltage
(dv/dt)c
Time
(di/dt)c
Time
Time
VD
R07DS1325EJ0300 Rev.3.00
Sept. 10, 2019
Page 2 of 7





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