BCR8PM-12LA

isc Thyristors INCHANGE Semiconductor BCR8PM-12LA DESCRIPTION ·With TO-220F packaging ·Operating in 3 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Solid state relays;heating and cooking appliances ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VDRM Repetitive peak off-state voltage 600 V VRRM Repetitive peak reverse voltage 600 V IT(RSM) Average on-state current @Tc=113℃ 8 A ITSM Surge non-repetitive on-state current 60HZ 80 A PG(AV) Average gate power dissipation ( over any 20 ms period ) @Tc=150℃ 0.5 W Tj Operating junction temperature Tstg Storage temperature -40~125 ℃ -40~125 ℃ isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor BCR8PM-12LA ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT IRRM Repetitive peak reverse current VR=VRRM Rated; IDRM Repetitive peak off-state current VD=VDRM Rated; Tj=25℃; Tj=150℃ 50 2000 μA VTM On-state voltage IGT Gate-trigger current VGT Rth (j-c) Gate-trigger voltage Junction to case IT=12A Ⅰ VD =6V;RL=6Ω;RG=330Ω Ⅱ Ⅲ VD =6V;RL=6Ω;RG=330Ω Half cycle 1.6 V 30 30 mA 30 1.5 V 3.7 ℃/W NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a gui...