Triac. BCR8PM-16LA Datasheet

BCR8PM-16LA Triac. Datasheet pdf. Equivalent

Part BCR8PM-16LA
Description Triac
Feature BCR8PM-16LA Triac Medium Power Use Preliminary Datasheet R07DS0144EJ0200 (Previous: REJ03G0310-0100.
Manufacture Renesas
Datasheet
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BCR8PM-16LA
BCR8PM-16LA
Triac
Medium Power Use
Preliminary Datasheet
R07DS0144EJ0200
(Previous: REJ03G0310-0100)
Rev.2.00
Sep 16, 2010
Features
IT (RMS) : 8 A
VDRM : 800 V
IFGTI, IRGTI, IRGT III : 30 mA
Viso : 2000 V
Outline
Insulated Type
Planar Passivation Type
UL Recognized : Yellow Card No. E223904
RENESAS Package code: PRSS0003AA-A
(Package name: TO-220F )
12 3
2
3
1
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
Applications
Washing machine, inversion operation of capacitor motor, and other general controlling devices
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Symbol
VDRM
VDSM
Voltage class
16
800
960
Unit
V
V
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Isolation voltage
Notes: 1. Gate open.
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
Viso
Ratings
8
80
26
5
0.5
10
2
– 40 to +125
– 40 to +125
2.0
2000
Unit
Conditions
A
Commercial frequency, sine full wave
360° conduction, Tc = 88C
A
60Hz sinewave 1 full cycle, peak value,
non-repetitive
A2s
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
W
W
V
A
C
C
g
Typical value
V
Ta = 25C, AC 1 minute,
T1·T2·G terminal to case
R07DS0144EJ0200 Rev.2.00
Sep 16, 2010
Page 1 of 7



BCR8PM-16LA
BCR8PM-16LA
Preliminary
Electrical Characteristics
Parameter
Symbol Min.
Typ.
Max.
Unit
Test conditions
Repetitive peak off-state current
IDRM
2.0
mA Tj = 125C, VDRM applied
On-state voltage
VTM
1.6
V
Tc = 25C, ITM = 12 A,
Instantaneous measurement
Gate trigger voltageNote2
VFGT
1.5
V
Tj = 25C, VD = 6 V, RL = 6 ,

VRGT
1.5
V
RG = 330

VRGT
1.5
V
Gate trigger currentNote2
IFGT
30
mA Tj = 25C, VD = 6 V, RL = 6 ,

IRGT
30
mA RG = 330

IRGT
30
mA
Gate non-trigger voltage
Thermal resistance
VGD
0.2
V
Tj = 125C, VD = 1/2 VDRM
Rth (j-c)
3.7
C/W Junction to caseNote3
Critical-rate of rise of off-state
(dv/dt)c
10
V/s Tj = 125C
commutating voltageNote4
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125C
2. Rate of decay of on-state commutating current
(di/dt)c = – 4.0 A/ms
3. Peak off-state voltage
VD = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
VD
R07DS0144EJ0200 Rev.2.00
Sep 16, 2010
Page 2 of 7





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